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TSC5302DCPROG датащи(PDF) 1 Page - Taiwan Semiconductor Company, Ltd |
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TSC5302DCPROG датащи(HTML) 1 Page - Taiwan Semiconductor Company, Ltd |
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1 / 6 page ![]() TSC5302D High Voltage NPN Transistor with Diode 1/6 Version: G14 TO-251 (IPAK) TO-252 (DPAK) Features ● Build-in Free-wheeling Diode Makes Efficient Anti-saturation Operation ● No Need to Interest hFE Value Because of Low Variable Storage-time Spread Even Though Comer Spirit Product. ● Low Base Drive Requirement ● Suitable for Half Bridge Light Ballast Application Structure ● Silicon Triple Diffused Type ● NPN Silicon Transistor with Diode Ordering Information Part No. Package Packing TSC5302DCP ROG TO-252 2.5kpcs / 13” Reel TSC5302DCH C5G TO-251 75pcs / Tube Note: “G” denote for Halogen Free Product Absolute Maximum Ratings (Ta = 25oC unless otherwise noted) Parameter Symbol Limit Unit Collector-Base Voltage VCBO 700 V Collector-Emitter Voltage VCEO 400 V Emitter-Base Voltage VEBO 10 V Collector Current IC 2 A Collector Peak Current (tp <5ms) ICM 4 A Base Current IB 1 A Base Peak Current (tp <5ms) IBM 2 A Total Dissipation @ Tc ≤ 25 oC TO-251 Ptot 1.5 W TO-252 25 Maximum Operating Junction Temperature TJ +150 oC Storage Temperature Range TSTG -65 to +150 oC Thermal Performance Parameter Symbol Limit Unit Junction to Case Thermal Resistance RӨJC 6.25 oC/W Junction to Ambient Thermal Resistance RӨJA 100 oC/W Block Diagram Pin Definition: 1. Base 2. Collector 3. Emitter PRODUCT SUMMARY BVCEO 400V BVCBO 700V IC 2A VCE(SAT) 1.1V @ IC=1A, IB=0.25A |
Аналогичный номер детали - TSC5302DCPROG |
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Аналогичное описание - TSC5302DCPROG |
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