RH108A

2

rh108afc

(Preirradiation, Note 4)

Note 1: Stresses beyond those listed under Absolute Maximum Ratings

may cause permanent damage to the device. Exposure to any Absolute

Maximum Rating condition for extended periods may affect device

reliability and lifetime.

Note 2: For supply voltages less than ±15V, the maximum input voltage

isequal to the supply voltage.

TABLE 1: ELECTRICAL CHARACTERISTICS

SYMBOL PARAMETER

CONDITIONS

NOTES

SUB-

GROUP

SUB-

GROUP

UNITS

MIN

TYP

MAX

MIN

TYP

MAX

Input Offset Voltage

0.5

1

1.0

2,3

mV

ΔTemp

Average Tempco of Offset

Voltage

3

5.0

μV/°C

Input Offset Current

0.2

1

0.4

2,3

nA

ΔTemp

Average Tempco of Offset

Current

3

2.5

pA/°C

Input Bias Current

2.0

1

3.0

2,3

nA

Large-Signal Voltage Gain

80

4

40

5,6

V/mV

CMRR

Common Mode Rejection Ratio

96

1

96

2,3

dB

PSRR

Power Supply Rejection Ratio

96

1

96

2,3

dB

Input Voltage Range

3

±13.5

±13.5

V

Output Voltage Swing

±13

4

±13

5,6

V

Input Resistance

3

30

MΩ

Supply Current

(Note 6)

0.6

1

0.4

2

mA

SYMBOL

PARAMETER

CONDITIONS

NOTES

10KRAD (Si)

20KRAD (Si)

50KRAD (Si)

80KRAD (Si)

UNITS

MIN

MAX

MIN

MAX

MIN

MAX

MIN

MAX

Input Offset Voltage

0.5

0.5

0.5

1.0

mV

Input Offset Current

0.3

0.3

0.3

0.3

nA

Input Bias Current

±2.0

±2.0

±2.0

±4.0

nA

Large-Signal Voltage Gain

98

98

90

86

dB

CMRR

Common Mode Rejection Ratio

96

96

84

70

dB

PSRR

Power Supply Rejection Ratio

4

96

96

84

70

dB

Input Voltage Range

3

±13.5

±13.5

±13.5

±13.5

V

Output Voltage Swing

±13

±13

±13

±13

V

Input Resistance

3

30

30

30

30

MΩ

Supply Current

0.6

0.6

0.6

0.6

mA

(Preirradiation, Note 4)

TABLE 1A: ELECTRICAL CHARACTERISTICS

Note 3: Guaranteed by design, characterization or correlation to

othertested parameters.

unless otherwise noted.