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поискавой системы для электроныых деталей |
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поискавой системы для электроныых деталей |
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TS19450CSRLG датащи(PDF) 2 Page - Taiwan Semiconductor Company, Ltd |
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TS19450CSRLG датащи(HTML) 2 Page - Taiwan Semiconductor Company, Ltd |
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2 / 10 page  TS19450 Taiwan Semiconductor Document Number: DS_P0000187 2 Version: B15 ABSOLUTE MAXIMUM RATINGS (T A = 25°C unless otherwise specified) (Note 1) PARAMETER SYMBOL LIMIT UNIT Input Voltage Range VIN to GND -0.5 ~ +470 V Internal Regulated Voltage VDD to GND 13.5 V CS, LD, PWMD, Gate, RT to GND -0.3 ~ (VDD+0.3) V Continuous Power Dissipation (Note 2) PD 630 mW Storage Temperature Range TA -65 to +150 oC Junction Temperature Range TJ -40 to +150 oC THERMAL PERFORMANCE (Note 3) PARAMETER SYMBOL LIMIT UNIT Thermal Resistance – Junction to Ambient RθJA 128 oC/W ELECTRICAL SPECIFICATIONS (T A= 25 oC, V IN= 12V, unless otherwise noted) (Note 4) PARAMETER SYMBOL CONDITION MIN TYP MAX UNIT Input DC Input Voltage Range VINDC DC input voltage 8.0 -- 450 V Shut-down Mode Supply Current IINSD Pin PWMD to GND -- 0.5 1.0 mA Internal Regulator Internally Regulated Voltage VDD VIN=8V, IDD(EXT)=0, 500pF at Gate, RT=226kΩ 7.25 7.5 7.75 V Line Regulation of VDD ∆V DDLine VIN=8~450V, IDD(EXT)=0 500pF at Gate, RT=226kΩ 0 -- 1.0 V Load Regulation of VDD ∆V DDLoad IDD(EXT)= 0 ~ 1mA 500pF at Gate, RT=226kΩ, PWMD=VDD 0 -- 100 mV Undervoltage Lockout Threshold UVLO VIN rising 6.45 6.7 6.95 V Undervoltage Lockout Hysteresis ∆UVLO VIN falling -- 500 -- mV VDD current available for external circuitry (Note 5) VDD (EXT) VIN=8V~100V -- -- 1.0 mA Dimming PWMD Input Low Voltage VENL VIN=8V~450V -- -- 1.0 V PWMD Input High Voltage VENH VIN=8V~450V 2.4 -- -- V PWMD Pull-down resistance at PWMD REN VPWMD=5V 50 100 150 kΩ Linear Dimming pin Voltage VLD VIN=12V 0 -- 250 mV |
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