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UGF8JD датащи(PDF) 1 Page - Taiwan Semiconductor Company, Ltd

номер детали UGF8JD
подробное описание детали  Isolated Ultra Fast Rectifier
PDF  4 Pages
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производитель  TSC [Taiwan Semiconductor Company, Ltd]
домашняя страница  http://www.taiwansemi.com
Logo TSC - Taiwan Semiconductor Company, Ltd

UGF8JD датащи(HTML) 1 Page - Taiwan Semiconductor Company, Ltd

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CREAT BY ART
- Especially suited as boost diode on continuous mode power factor correctors
- Ideal Solution for hard switching condition
- High capability for high di/dt operation. Downsizing of mosfet and heatsink
- High surge current capability
- AEC-Q101 qualified (Green compound not involved)
- Halogen-free according to IEC 61249-2-21 definition
Molding compound, UL flammability classification rating 94V-0
Base P/N with suffix "G" on packing code - halogen-free
Terminal:
Matte tin plated leads, solderable per JESD22-B102
Meet JESD 201 class 1A whisker test
VRRM
V
IF(AV)
A
Qrr
nC
IRM
A
RθJC
OC/W
TJ
OC
TSTG
OC
Document Number: DS_D1312023
Version: A13
UGF8JD
Taiwan Semiconductor
Isolated Ultra Fast Rectifier
FEATURES
- Compliant to RoHS Directive 2011/65/EU and
in accordance to WEEE 2002/96/EC
MECHANICAL DATA
ITO-220AC
DESCRIPTION
Especially suited as free wheeling or boost diode in continuous mode
power factor correctors and other power switching applications.
The low stored charge and ultrafast soft recovery minimizes ringing and
electrical noise in power switching circuits. The family drastically cuts losses
in the associated MOSFET when run at high dIF/dt.
Case:
ITO-220AC
Polarity:
As marked
Mounting torque:
5 in-lbs maximum
Weight:
1.7g (approximately)
UNIT
Maximum repetitive peak reverse voltage
Maximum average forward rectified current
8.0
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS (TA=25℃ unless otherwise noted)
PARAMETER
SYMBOL
UGF8JD
600
V
55.5
Maximum instantaneous forward voltage (Note 1)
IF= 8 A
VF
Peak forward surge current, 8.3 ms single half
sine-wave superimposed on rated load
IFSM
100
A
IF=1A, dIF/dt=-200A/us, VR=400V, TJ=125℃
Maximum reverse current @ Rated VR TJ=25 ℃
TJ=125 ℃
IR
0.5
μA
IF=0.5A, IRR=0.25A, IR=1A, TJ=25℃
-
ns
2.3
100
Reverse recovery time
IF=1A, dIF/dt=-50A/us, VR=30V, TJ=25℃
Trr
TYP
MAX
13
-30
Storage temperature range
- 55 to +150
Note 1: Pulse test with PW=300 μs, 1% duty cycle
Typical thermal resistance
4
Operating junction temperature range
- 55 to +150
Reverse recovery charges
TYP
MAX
IF=1A, dIF/dt=-200A/us, VR=400V, TJ=125℃
90
-


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