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LTC1157CS8 датащи(PDF) 5 Page - Linear Technology |
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LTC1157CS8 датащи(HTML) 5 Page - Linear Technology |
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5 / 8 page ![]() 5 LTC1157 APPLICATIO S I FOR ATIO MOSFET Selection The LTC1157 is designed to operate with both standard and logic level N-channel MOSFET switches. The choice of switch is determined primarily by the operating supply voltage. Logic Level MOSFET Switches at 3.3V Logic level switches should be used with the LTC1157 when powered from 2.7V to 4V. Although there is some variation among manufacturers, logic level MOSFET switches are typically rated with VGS = 4V with a maximum continuous VGS rating of ±10V. RDS(ON) and maximum VDS ratings are similar to standard MOSFETs and there is generally little price differential. Logic level MOSFETs are frequently designated by an “L” and are usually available in surface mount packaging. Some logic level MOSFETs are rated up to ±15Vandcanbeusedinapplicationswhich require operation over the entire 2.7V to 5.5V range. Standard MOSFET Switches at 5V Standard N-channel MOSFET switches should be used with the LTC1157 when powered from 4V to 5.5V supply as the built-in charge pump produces ample gate drive to fully enhance these switches when powered from a 5V nominal supply. Standard N-channel MOSFET switches are rated with VGS = 10V and are generally restricted to a maximum of ±20V. Powering Large Capacitive Loads Electrical subsystems in portable battery-powered equip- ment are typically bypassed with large filter capacitors to reduce supply transients and supply induced glitching. If not properly powered however, these capacitors may themselves become the source of supply glitching. For example, if a 100 µF capacitor is powered through a switch with a slew rate of 0.1V/ µs, the current during start- up is: ISTART = C(dV/dt) = (100 × 10–6) (1 × 105) = 10A Obviously, this is too much current for the regulator (or output capacitor) to supply and the output will glitch by as much as a few volts. The start-up current can be substantially reduced by limiting the slew rate at the gate of an N-channel switch as shown in Figure 1. The gate drive output of the LTC1157 is passed through a simple RC network, R1 and C1, which substantially slows the slew rate of the MOSFET gate to approximately 1.5 × 10–4V/µs. Since the MOSFET is operating as a source follower, the slew rate at the source is essentially the same as that at the gate, reducing the start-up current to approximately 15mA which is easily managed by the system regulator. R2 is required to eliminate the possibility of parasitic MOSFET oscillations during switch transitions. Also, it is good practice to isolate the gates of paralleled MOSFETs with 1k resistors to decrease the possibility of interaction between switches. Reverse Battery Protection The LTC1157 can be protected against reverse battery conditions by connecting a 300 Ω resistor in series with the ground pin. The resistor limits the supply current to less than 12mA with – 3.6V applied. Since the LTC1157 draws very little current while in normal operation, the drop across the ground resistor is minimal. The 3.3V µP (or control logic) can be protected by adding 10k resistors in series with the input pins. + VS GND G1 IN1 1/2 LTC1157 MTD3055EL 3.3 µF VIN LTC1157 • TA02 LT1129-3.3 + 3.3V LOAD C1 0.1 µF CLOAD 100 µF 3.3V R2 1k R1 100k ON/0FF Figure 1. Powering a Large Capacitive Load |
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