MMBT3906LP_15 datasheet(4/7 Pages) DIODES

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MMBT3906LP

Document number: DS31836 Rev. 7 - 2

4 of 7

www.diodes.com

May 2015

MMBT3906LP

Electrical Characteristics (@TA = +25°C, unless otherwise specified.)

Characteristic

Symbol

Min

Max

Unit

Test Condition

OFF CHARACTERISTICS

Collector-Base Breakdown Voltage

BVCBO

-40



IC = -100µA, IE = 0

Collector-Emitter Breakdown Voltage (Note 9)

BVCEO

-40



IC = -10.0mA, IB = 0

Emitter-Base Breakdown Voltage

BVEBO

-6.0



IE = -100µA, IC = 0

Collector Cutoff Current

ICEX



-50

VCE = -30V, VEB(OFF) = -3.0V

ICBO



-50

VCB = -30V, IE = 0

Base Cutoff Current

IBL



-50

VCE = -30V, VEB(OFF) = -3.0V

ON CHARACTERISTICS (Note 9)

DC Current Gain

hFE



IC = -100µA, VCE = -1.0V



IC = -1.0mA, VCE = -1.0V

100

300

IC = -10mA, VCE = -1.0V



IC = -50mA, VCE = -1.0V



IC = -100mA, VCE = -1.0V

Collector-Emitter Saturation Voltage

VCE(sat)



-0.25

IC = -10mA, IB = -1.0mA



-0.40

IC = -50mA, IB = -5.0mA

Base-Emitter Saturation Voltage

VBE(sat)

-0.65

-0.85

IC = -10mA, IB = -1.0mA



-0.95

IC = -50mA, IB = -5.0mA

SMALL SIGNAL CHARACTERISTICS

Output Capacitance

Cobo



4.5

VCB = -5.0V, f = 1.0MHz, IE = 0

Input Capacitance

Cibo



VEB = -0.5V, f = 1.0MHz, IC = 0

Input Impedance

hie

2.0

VCE = 10V, IC = 1.0mA,

f = 1.0kHz

Voltage Feedback Ratio

hre

0.1

x 10

-4

Small Signal Current Gain

hfe

100

400



Output Admittance

hoe

3.0

µS

Current Gain-Bandwidth Product

300



MHz

VCE = -20V, IC = -10mA,

f = 100MHz

SWITCHING CHARACTERISTICS

Delay Time



VCC = -3.0V, IC = -10mA,

VBE(off) = 0.5V, IB1 = -1.0mA

Rise Time



Storage Time



225

VCC = -3.0V, IC = -10mA,

IB1 = IB2 = -1.0mA

Fall Time



Note:

9. Measured under pulsed conditions. Pulse width

≤ 300µs. Duty cycle ≤ 2%.

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