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поискавой системы для электроныых деталей |
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поискавой системы для электроныых деталей |
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LT1783 датащи(PDF) 3 Page - Linear Technology |
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LT1783 датащи(HTML) 3 Page - Linear Technology |
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3 / 12 page  3 LT1783 SYMBOL PARAMETER CONDITIONS MIN TYP MAX UNITS ELECTRICAL CHARACTERISTICS The q denotes specifications which apply over the specified temperature range, otherwise specifications are TA = 25°C. VS = 3V, 0V; VS = 5V, 0V, VCM = VOUT = half supply, for the 6-lead part VPIN5 = 0V, pulse power tested unless otherwise specified. VOL Output Voltage Swing LOW No Load q 38 mV ISINK = 5mA q 200 400 mV VS = 5V, ISINK = 10mA q 330 600 mV VOH Output Voltage Swing HIGH VS = 3V, No Load q 2.91 2.94 V VS = 3V, ISOURCE = 5mA q 2.6 2.8 V VS = 5V, No Load q 4.91 4.94 V VS = 5V, ISOURCE = 10mA q 4.5 4.74 V ISC Short-Circuit Current (Note 2) VS = 3V, Short to GND 5 10 mA VS = 3V, Short to VCC 15 30 mA VS = 5V, Short to GND 15 30 mA VS = 5V, Short to VCC 20 40 mA Minimum Supply Voltage q 2.5 2.7 V Reverse Supply Voltage IS = –100µA q 18 V IS Supply Current 210 300 µA (Note 4) q 350 µA Supply Current, SHDN VPIN5 = 2V, No Load (Note 8) q 518 µA ISHDN Shutdown Pin Current VPIN5 = 0.3V, No load (Note 8) q 0.5 nA VPIN5 = 2V, No Load (Note 8) q 28 µA VPIN5 = 5V, No Load (Note 8) 5 µA Shutdown Output Leakage Current VPIN5 = 2V, No Load (Note 8) q 0.05 1 µA Maximum Shutdown Pin Current VPIN5 = 18V, No Load (Note 8) q 10 30 µA VL Shutdown Pin Input Low Voltage (Note 8) q 0.3 V VH Shutdown Pin Input High Voltage (Note 8) q 2V tON Turn-On Time VPIN5 = 5V to 0V, RL = 10k (Note 8) 25 µs tOFF Turn-Off Time VPIN5 = 0V to 5V, RL = 10k (Note 8) 3 µs GBW Gain Bandwidth Product f = 5kHz 750 1250 kHz (Note 3) 0 °C ≤ TA ≤ 70°C q 600 kHz SR Slew Rate AV = –1, RL = ∞ 0.24 0.42 V/ µs (Note 5) 0 °C ≤ TA ≤ 70°C q 0.21 V/ µs FPBW Full-Power Bandwidth (Note 9) VOUT = 2VP-P 66 kHz tS Settling Time VS = 5V, ∆VOUT = 2V to 0.1%, AV = –1 12 µs THD Distortion VS = 3V, VO = 2VP-P, AV = 1, RL = 10k, f = 1kHz 0.001 % VS = ±5V, VCM = 0V,VOUT = 0V, for the 6-lead part VSHDN = V– VOS Input Offset Voltage TA = 25°C 500 900 µV 0 °C ≤ TA ≤ 70°C q 1050 µV Input Offset Voltage Drift (Note 7) 0 °C ≤ TA ≤ 70°C q 25 µV/°C IOS Input Offset Current q 48 nA IB Input Bias Current q 40 80 nA Input Bias Current Drift 0 °C ≤ TA ≤ 70°C q 0.06 nA/ °C Input Noise Voltage 0.1Hz to 10Hz 1 µVP-P en Input Noise Voltage Density f = 1kHz 20 nV/ √Hz in Input Noise Current Density f = 1kHz 0.14 pA/ √Hz |
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