LT1189CS8 datasheet(4/12 Pages) LINER

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LT1189

LT1189C

SYMBOL

PARAMETER

CONDITIONS

MIN

TYP

MAX

UNITS

VOS

Input Offset Voltage

Either Input

1.0

3.0

(Note 4)

SOIC Package

1.0

6.0

∆VOS /∆T

Input VOS Drift

5.0

µV/°C

IOS

Input Offset Current

Either Input

0.2

1.5

µA

Input Bias Current

Either Input

±0.5

±3.5

µA

Input Voltage Range

–2.5

3.5

CMRR

Common-Mode Rejection Ratio

VCM = – 2.5V to 3.5V

105

PSRR

Power Supply Rejection Ratio

VS = ±2.375V to ±8V

VOUT

Output Voltage Swing

VS = ±5V, RL = 1k, AV = 50

±3.7

±4.0

VS = ±8V, RL = 1k, AV = 50

±6.6

±7.0

VS = ±8V, RL = 300Ω, AV = 50, (Note 3)

±6.4

±6.6

Gain Error

VO = ±1V, AV = 10, RL = 1k

1.0

3.5

Supply Current

Shutdown Supply Current

Pin 5 at V–, (Note 11)

0.8

1.5

IS/D

Shutdown Pin Current

Pin 5 at V–

525

µA

VS = ±5V, VREF = 0V, RFB1 = 900Ω from pins 6 to 8, RFB2 = 100Ω from pin 8 to ground, RL = RFB1 + RFB2 = 1k, CL ≤ 10pF, pin 5 open.

Note 1: A heat sink may be required to keep the junction temperature below

absolute maximum when the output is shorted continuously.

Note 2: TJ is calculated from the ambient temperature TA and power dissipation

PD according to the following formulas:

LT1189MJ8, LT1189CJ8:

TJ = TA + (PD × 100°C/W)

LT1189CN8:

TJ = TA + (PD × 100°C/W)

LT1189CS8:

TJ = TA + (PD × 150°C/W)

Note 3: When RL = 1k is specified, the load resistor is RFB1 + RFB2, but when

RL = 300Ω is specified, then an additional 430Ω is added to the output such

that (RFB1 + RFB2) in parallel with 430Ω is RL = 300Ω.

Note 4: VOS measured at the output (pin 6) is the contribution from both input

pair, and is input referred.

Note 5: VIN LIM is the maximum voltage between –VIN and +VIN (pin 2 and

pin 3) for which the output can respond.

Note 6: Slew rate is measured between

±1V on the output, with a VIN step of

±0.5V, AV = 10 and RL = 1k.

Note 7: Full power bandwidth is calculated from the slew rate measurement:

FPBW = SR/2

πVp.

Note 8: Settling time measurement techniques are shown in “Take the

Guesswork Out of Settling Time Measurements,” EDN, September 19, 1985.

Note 9: NTSC (3.58MHz).

Note 10: AC parameters are 100% tested on the ceramic and plastic DIP

packaged parts (J8 and N8 suffix) and are sample tested on every lot of the SO

packaged parts (S8 suffix).

Note 11: See Application section for shutdown at elevated temperatures. Do

not operate shutdown above TJ > 125°C.

–

ELECTRICAL C

HARA TERISTICS 0°C ≤ T

A ≤ 70°C, (Note 3)

LT1189C

SYMBOL

PARAMETER

CONDITIONS

MIN

TYP

MAX

UNITS

VOS

Input Offset Voltage, (Note 4)

Either Input

1.0

3.0

∆VOS/∆T

Input VOS Drift

5.0

µV/°C

IOS

Input Offset Current

Either Input

0.2

1.5

µA

Input Bias Current

Either Input

±0.5

±3.5

µA

Input Voltage Range

2.0

3.5

CMRR

Common-Mode Rejection Ratio

VCM = 2.0V to 3.5V

100

VOUT

Output Voltage Swing

RL = 300Ω to Ground

VOUT High

3.5

4.0

(Note 3)

VOUT Low

0.15

0.4

Supply Current

Shutdown Supply Current

Pin 5 at V, (Note 11)

0.8

1.5

IS/D

Shutdown Pin Current

Pin 5 at V–

525

µA

VS+ = +5V, VS– = 0V, VREF = 2.5V, RFB1 = 900Ω from pins 6 to 8, RFB2 = 100Ω from pin 8 to VREF, RL = RFB1 + RFB2 = 1k, CL ≤ 10pF, pin 5

open.

°C ≤ TA ≤ 70°C, (Note 3)

ELECTRICAL C

HARA TERISTICS

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