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поискавой системы для электроныых деталей |
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поискавой системы для электроныых деталей |
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LT1187 датащи(PDF) 2 Page - Linear Technology |
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LT1187 датащи(HTML) 2 Page - Linear Technology |
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2 / 12 page  LT1187 2 A G A U A R BSOLUTEXI TI S PACKAGE/ORDER I FOR ATIO ORDER PART NUMBER Total Supply Voltage (V + to V –) ............................. 18V Differential Input Voltage ........................................ ±6V Input Voltage .......................................................... ±VS Output Short Circuit Duration (Note 1) ........ Continuous Operating Temperature Range LT1187M ..................................... – 55 °C to 150°C LT1187C............................................. 0 °C to 70°C Junction Temperature (Note 2) Plastic Package (CN8,CS8) ......................... 150 °C Ceramic Package (CJ8,MJ8) ....................... 175 °C Storage Temperature Range ................ – 65 °C to 150°C Lead Temperature (Soldering, 10 sec.)................ 300 °C S8 PART MARKING LT1187MJ8 LT1187CJ8 LT1187CN8 LT1187CS8 LT1187M/C SYMBOL PARAMETER CONDITIONS MIN TYP MAX UNITS VOS Input Offset Voltage Either Input, (Note 4) 2.0 10 mV SOIC Package 2.0 11 mV IOS Input Offset Current Either Input 0.2 1.0 µA IB Input Bias Current Either Input ±0.5 ±2.0 µA en Input Noise Voltage fO = 10kHz 65 nV/ √Hz in Input Noise Current fO = 10kHz 1.5 pA/ √Hz RIN Input Resistance Differential 100 k Ω CIN Input Capacitance Either Input 2.0 pF VIN LIM Input Voltage Limit (Note 5) ±380 mV Input Voltage Range –2.5 3.5 V CMRR Common-Mode Rejection Ratio VCM = –2.5V to 3.5V 70 100 dB PSRR Power Supply Rejection Ratio VS = ±2.375V to ±8V 70 85 dB VOUT Output Voltage Swing VS = ±5V, RL = 1k, AV = 50 ±3.8 ±4.0 V VS = ±8V, RL = 1k, AV = 50 ±6.7 ±7.0 VS = ±8V, RL = 300Ω, AV = 50, (Note 3) ±6.4 ±6.8 GE Gain Error VO = ±1V, AV = 10, RL = 1k 0.2 1.0 % SR Slew Rate (Note 6, 10) 100 165 V/ µs FPBW Full Power Bandwidth VO = 1VP-P, (Note 7) 53 MHz BW Small Signal Bandwidth AV = 10 5.7 MHz tr, tf Rise Time, Fall Time AV = 50, VO = ±1.5V, 20% to 80% (Note 10) 150 230 325 ns tPD Propagation Delay RL= 1k, VO = ±125mV, 50% to 50% 26 ns Overshoot VO = ± 50mV 0 % ts Settling Time 3V Step, 0.1%, (Note 8) 100 ns Diff AV Differential Gain RL = 1k, AV = 4, (Note 9) 0.6 % Diff Ph Differential Phase RL = 1k, AV = 4, (Note 9) 0.8 DEGP-P IS Supply Current 13 16 mA Shutdown Supply Current Pin 5 at V – 0.8 1.5 mA 5V – + VS = ±5V, VREF = 0V, RFB1 = 900Ω from pins 6 to 8, RFB2 = 100Ω from pin 8 to ground, RL = RFB1 + RFB2 = 1k, CL ≤ 10pF, pin 5 open. ELECTRICAL C C HARA TERISTICS T A = 25°C, (Note 3) TJMAX = 175°C, θJA = 100°C/W (J8) TJMAX = 150°C, θJA = 100°C/W (N8) TJMAX = 150°C, θJA = 150°C/W (S8) 8 7 6 5 4 3 2 1 +/REF –IN +IN V S/D OUT + V –/FB TOP VIEW S8 PACKAGE 8-LEAD PLASTIC SOIC – N8 PACKAGE 8-LEAD PLASTIC DIP J8 PACKAGE 8-LEAD HERMETIC DIP LT1187 • POI01 1187 Consult factory for Industrial grade parts. |
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