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LT1168AI датащи(PDF) 5 Page - Linear Technology |
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LT1168AI датащи(HTML) 5 Page - Linear Technology |
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5 / 16 page ![]() 5 LT1168 Note 1: Absolute Maximum Ratings are those values beyond which the life of a device may be imparied. Note 2: If the input voltage exceeds the supplies, the input current should be limited to less than 20mA. Note 3: A heat sink may be required to keep the junction temperature below absolute maximum. Note 4: The LT1168AC/LT1168C are guaranteed functional over the operating temperature range of – 40 °C and 85°C. Note 5: The LT1168AC/LT1168C are guaranteed to meet specified performance from 0 °C to 70°C. The LT1168AC/LT1168C are designed, characterized and expected to meet specified performance from – 40 °C to 85 °C but are not tested or QA sampled at these temperatures. The LT1168AI/LT1168I are guaranteed to meet specified performance from –40 °C to 85°C. Note 6: Typical parameters are defined as the 60% of the yield parameter distribution. Note 7: Does not include the tolerance of the external gain resistor RG. Note 8: This parameter is measured in a high speed automatic tester that does not measure the thermal effects with longer time constants. The magnitude of these thermal effects are dependent on the package used, heat sinking and air flow conditions. Note 9: This parameter is not 100% tested. Note 10: Hysteresis in offset voltage is created by package stress that differs depending on whether the IC was previously at a higher or lower temperature. Offset voltage hysteresis is always measured at 25 °C, but the IC is cycled to 85 °C I-grade (or 70°C C-grade) or –40°C I-grade (0 °C C-grade) before successive measurement. 60% of the parts will pass the typical limit on the data sheet. The q denotes the specifications which apply over the – 40 °C ≤ TA ≤ 85°C temperature range. VS = ±15V, VCM = 0V, RL = 10k unless otherwise noted. (Note 5) ELECTRICAL CHARACTERISTICS LT1168AI LT1168I SYMBOL PARAMETER CONDITIONS (Note 6) MIN TYP MAX MIN TYP MAX UNITS VOST Total Input Referred Offset Voltage VOST = VOSI + VOSO/G VOSI Input Offset Voltage q 20 75 25 100 µV VOSIH Input Offset Voltage Hysteresis (Notes 7, 10) q 3.0 3.0 µV VOSO Output Offset Voltage q 180 500 200 600 µV VOSOH Output Offset Voltage Hysteresis (Notes 7, 10) q 30 30 µV VOSI/T Input Offset Drift (RTI) (Note 9) q 0.05 0.3 0.06 0.4 µV/°C VOSO/T Output Offset Drift (Note 9) q 0.8 5 1 6 µV/°C IOS Input Offset Current q 110 550 120 700 pA IOS/T Input Offset Current Drift q 0.3 0.3 pA/ °C IB Input Bias Current q 120 500 220 800 pA IB/T Input Bias Current Drift q 1.4 1.4 pA/ °C VCM Input Voltage Range VS = ±2.3V to ±5V q –VS + 2.1 +VS – 1.3 –VS + 2.1 +VS – 1.3 V VS = ±5V to ±18V q –VS + 2.1 +VS – 1.4 –VS + 2.1 +VS – 1.4 V CMRR Common Mode 1k Source Imbalance, Rejection Ratio VCM = 0V to ±10V G = 1 q 86 90 81 90 dB G = 10 q 98 105 95 105 dB G = 100 q 114 118 112 118 dB G = 1000 q 116 133 112 133 dB PSRR Power Supply VS = ±2.3V to ±18V Rejection Ratio G = 1 q 100 112 95 112 dB G = 10 q 120 125 115 125 dB G = 100 q 125 132 120 132 dB G = 1000 q 128 140 125 140 dB IS Supply Current q 420 650 420 650 µA VOUT Output Voltage Swing VS = ±2.3V to ±5V q –VS + 1.4 +VS – 1.3 –VS + 1.4 +VS – 1.3 V VS = ±5V to ±18V q –VS + 1.6 +VS – 1.5 –VS + 1.6 +VS – 1.5 V IOUT Output Current q 15 22 15 22 mA SR Slew Rate q 0.22 0.41 0.22 0.42 V/ µs VREF Voltage Range (Note 9) q –VS + 1.6 +VS – 1.6 –VS + 1.6 +VS – 1.6 V |
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