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BC856A датащи(PDF) 2 Page - Diodes Incorporated

номер детали BC856A
подробное описание детали  PNP SMALL SIGNAL TRANSISTOR IN SOT23
PDF  7 Pages
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производитель  DIODES [Diodes Incorporated]
домашняя страница  http://www.diodes.com
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BC856A датащи(HTML) 2 Page - Diodes Incorporated

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BC856A
– BC858C
Document Number: DS11207 Rev. 24 - 2
2 of 7
www.diodes.com
October 2014
© Diodes Incorporated
BC856A-BC858C
Absolute Maximum Ratings (@TA = +25°C, unless otherwise specified.)
Characteristic
Symbol
Value
Unit
Collector-Base Voltage
BC856
VCBO
-80
V
BC857
-50
BC858
-30
Collector-Emitter Voltage
BC856
VCEO
-65
V
BC857
-45
BC858
-30
Emitter-Base Voltage
VEBO
-5.0
V
Continuous Collector Current
IC
-100
mA
Peak Collector Current
ICM
-200
mA
Peak Emitter Current
IEM
-200
mA
Peak Base Current
IBM
-200
mA
Thermal Characteristics (@TA = +25°C, unless otherwise specified.)
Characteristic
Symbol
Value
Unit
Power Dissipation
(Note 6)
PD
310
mW
(Note 7)
350
Thermal Resistance, Junction to Ambient
(Note 6)
RθJA
403
°C/W
(Note 7)
357
Thermal Resistance, Junction to Leads
(Note 8)
RθJL
350
°C/W
Operating and Storage Temperature Range
TJ,TSTG
-65 to +150
°C
ESD Ratings (Note 9)
Characteristic
Symbol
Value
Unit
JEDEC Class
Electrostatic Discharge - Human Body Model
ESD HBM
4,000
V
3A
Electrostatic Discharge - Machine Model
ESD MM
400
V
C
Notes:
6. For a device mounted on minimum recommended pad layout 1oz copper that is on a single-sided FR4 PCB; device is measured under still air
conditions whilst operating in a steady-state.
7. Same as Note 6, except the device is mounted on 15 mm x 15mm 1oz copper.
8. Thermal resistance from junction to solder-point (at the end of the leads).
9. Refer to JEDEC specification JESD22-A114 and JESD22-A115.



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