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поискавой системы для электроныых деталей |
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поискавой системы для электроныых деталей |
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STW7C2SA датащи(PDF) 4 Page - Seoul Semiconductor |
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STW7C2SA датащи(HTML) 4 Page - Seoul Semiconductor |
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4 / 31 page  www.seoulsemicon.com Product Data Sheet “제품 명 – 제품 군” 을 기입하십시오. 제품 군은 홈페이지 응용분야 분류기준을 참고한다. (예) SZ5M0WWC9 – High-power LED 4 글씨체는 : Arial, 10pt Revision numbering 기준: • 가스펙은 0.0 부터 시작 0.x…. • Final 승인원: 1.0 부터 시작 • 기존에서 일부 수정: +0.1 • 새로운 Data 추가 /또는 기존 것 삭제: +1.0 수정일자 표기형식; YYYY-MM-DD (예) 2013-04-01 STW7C2SA – Mid-Power LED Rev4.1 Performance Characteristics 전기적 특성 및 광 특성 스펙 테이블 Parameter Symbol Value Unit Min. Typ. Max. Forward Current I F - 100 200 mA Forward Voltage[1] V F (100mA) 5.6 6.1 6.6 V Reverse Voltage V r - 0.9 1.4 V Luminous Intensity (5,000 K) [1] Iv (100mA) - 27.5 86.6 - cd lm Iv (150mA) - 38.5 121.2 - cd Lm Luminous Intensity (3,500 K) [1] Iv (100mA) - 27.5 85.2 - cd lm Iv (150mA) - 38.5 119.3 - cd Lm Color Rendering Index [1] Ra 70 75 80 - Viewing Angle [2] 2 Θ 1/2 120 Power Dissipation P d - - 1.44 W Junction Temperature T j - - 125 ºC Operating Temperature T opr - 40 - + 85 ºC Storage Temperature T stg - 40 - + 100 ºC Thermal resistance (J to S) [3] Rθ J-S - 10 - ℃/W Turn-on voltage V F (1um) 3.8 - 5.4 V ESD Sensitivity(HBM) [4] - - - 5000 V Table 3. Characteristics, I F = 100mA , Tj = 25ºC, RH30% Notes : (1) Tolerance : VF :±0.2V, IV :±7%, Ra :±2, x,y :±0.007 (2) 2Θ 1/2 is the off-axis where the luminous intensity is 1/2 of the peak intensity (3) Thermal resistance: Rth JS (Junction to Solder) (4) A zener diode is included to protect the product from ESD. • LED’s properties might be different from suggested values like above and below tables if operation condition will be exceeded our parameter range. Care is to be taken that power dissipation does not exceed the absolute maximum rating of the product. • All measurements were made under the standardized environment of Seoul Semiconductor. Parameter Symbol Value Unit Min. Typ. Max. Forward Current I F - 100 - mA Forward Voltage[1] V F 5.6 - 6.4 V Luminous Intensity (3500K)[1] Iv 100mA - 27.5 - cd 150mA - 38.5 - cd CRI[1] Ra 70 - - Viewing Angle [2] 2 Θ 1/2 - 120 - Deg. Thermal resistance (J to S) [3] Rθ J-S - 10 - ℃/W ESD Sensitivity(HBM) - Class 3A JESD22-A114-E Parameter Symbol Value Unit Forward Current I F 200 mA Power Dissipation P D 1.44 W Junction Temperature T j 125 ºC Operating Temperature T opr -40~ + 85 ºC Storage Temperature T stg -40 ~ + 100 ºC Table 4. Absolute Maximum Ratings |
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