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AN1256 датащи(PDF) 3 Page - STMicroelectronics |
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AN1256 датащи(HTML) 3 Page - STMicroelectronics |
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3 / 7 page ![]() AN1256 Device characteristics 3/7 techniques to be 0.27 °C/W allowing for a maximum power dissipation of approximately 650 W (see Figure 4). Additionally, data was taken at 150 MHz demonstrating the gain and efficiency at the upper limits of the device characterization (see Figure 5). Figure 3. Power Gain and efficiency vs. output power Figure 4. Maximum thermal resistance vs. case temperature Figure 5. Power gain and efficiency vs. output power 0 50 100 150 200 250 300 350 400 450 0 0.5 1 1.5 2 2.5 3 Input power (W) 0 10 20 30 40 50 60 70 80 90 Pout Efficiency 19 20 21 22 23 24 25 26 27 0 50 100 150 200 250 300 350 400 Output power (W) 0 10 20 30 40 50 60 70 80 Gain Efficiency |
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