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AN1229 датащи(PDF) 2 Page - STMicroelectronics

номер детали AN1229
подробное описание детали  SD2932 RF MOSFET for 300 W FM amplifier
PDF  7 Pages
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производитель  STMICROELECTRONICS [STMicroelectronics]
домашняя страница  http://www.st.com
Logo STMICROELECTRONICS - STMicroelectronics

AN1229 датащи(HTML) 2 Page - STMicroelectronics

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Amplifier design
AN1229
2/7
1
Amplifier design
1.1
Input matching network
Typical input gate-to-gate impedance of SD2932 at 100 MHz is Zin = Rs + jXs = 2 - 2.6 j,
and can also be expressed as the combination of parallel resistance and reactance using
the following formulas:
Equation 1
Equation 2
Therefore, in order to achieve good input matching performances over the frequency range
88-108 MHz the unbalanced 50
Ω is to be transformed into an impedance with a value as
close as possible to Rp of 5.38
Ω.
From the circuit schematic given in Figure 6 , we can see that the input matching network is
based on a two section balun (1:1 balun in cascade with a 9:1 balun transformer) which
transforms the unbalanced 50
Ω to a balanced 5.56 Ω (2 x 2.78 Ω / 9:1 ratio). The first
section, a 5" long - 50
Ω coaxial cable and the second section, a two 3.9" long - 25 Ω flexible
coaxial cables with ferrite core NEOSIDE, are connected as described: a 10 nH inductor
(L1) is connected between the two gates to compensate SD2932 input parallel reactance
Xp.
1.2
Input matching network tuning
Figure 1.
Input Impedance of 1:1 balun in cascade with 4:1 balun
Rp
Rs
1
Xs
Rs
-------
⎝⎠
⎛⎞
2
+
5.38
=
=
X
P
R
P
X
S
R
S
-------
⎝⎠
⎛⎞
4.14j
=
=
0
50
100
150
200
250
300
350
Frequency (MHz)
-35
-30
-25
-20
-15
-10



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