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STMicroelectronics V and HB series IGBTs

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STMicroelectronics V and HB series IGBTs

The 600 V/650 V trench gate field-stop technology IGBTs (V and HB series respectively)

were tested in two different single phase main welding machine platforms implementing the

two-switch forward converter configuration, as detailed below:

•

IGBTs STGW40V60DF and STGW60V60DF (TO-247 package) were two-by-two

parallel tested on a 4 kW application board, switching at ~63 kHz.

•

IGBTs STGW40H65DFB and STGW60H65DFB (TO-247 package) were two-by-two

parallel tested on a 6 kW application board, switching at ~58 kHz.

The following table shows the voltage and current ratings found in the electrical

characteristics section of the respective component datasheets.

Table 1. Voltage and current rating of IGBTs

Device

selection

Techno/

series

Blocking

voltage

rating

Current

rating

Main benefits

Key products

Primary

switches

Q1 and Q2

Trench gate

field stop

“V” series

600 V

40 A – 60 A

– very high switching

speed

– low thermal

resistance

– safe paralleling

operation

– very fast soft

recovery antiparallel

diode

– low saturation

voltage

– tail-less switching off

temperature

coefficient

STGxnnV60DF

Trench gate

field stop

“HB” series

650 V

40 A – 60 A

– high switching

speed

– low thermal

resistance

– safe paralleling

operation

– very fast soft

recovery antiparallel

diode

– very low saturation

voltage

– minimized tail

current

– slightly positive

coefficient

STGxnnH65DFB