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AN4337 датащи(PDF) 12 Page - STMicroelectronics |
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AN4337 датащи(HTML) 12 Page - STMicroelectronics |
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12 / 14 page ![]() Conclusions AN4337 12/14 DocID025012 Rev 1 4 Conclusions Understanding how to approach a voltage overshoot which exceeds the V(BR)DSS absolute maximum rating is the key to designing reliable and, consequently, safe MOSFETs. The example in this paper provides step-by-step guidelines on how to obtain the safety margin in terms of IAR and EAS specifications when a MOSFET functions in a flyback converter. In particular, this example suggests that a MOSFET device is safe if the avalanche energy is lower than the EAS datasheet specification and the avalanche current is lower than the IAR absolute maximum rating; vice versa, a MOSFET is certainly safe if the maximum avalanche current is lower than IAR. |
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