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поискавой системы для электроныых деталей |
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поискавой системы для электроныых деталей |
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AN3994 датащи(PDF) 21 Page - STMicroelectronics |
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AN3994 датащи(HTML) 21 Page - STMicroelectronics |
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21 / 53 page  AN3994 MD II and MD V: which is the lowest loss one? Doc ID 022380 Rev 1 21/53 6 MD II and MD V: which is the lowest loss one? A dynamic on bench comparison has been carried out on four different MD V/MD II MOSFET couples in order to provide a reliable idea of their dynamic performances. All tests have been issued by the same simple clamped inductive load test circuit (refer to Figure 7) where the effects of parasitic elements have been reduced in order to make the effective MOSFET behavior more understandable. A 600 V,10 A SiC diode has been used as the clamp diode. The matches obtained under evaluation are those displayed in Table 1. The following graphs show the energy ON, the energy OFF, the di/dt, the dv/dt both at turn-on and turn-off of each compared match for different RG values, and two ID current levels. 6.1 STB42N65M5 vs. STW48NM60N Figure 18. STB42N65M5 vs. STW48NM60N Eon @ 8 A/16 A, 400 V Figure 19. STB42N65M5 vs. STW48NM60N di/dt at turn-on @ 8 A/16 A, 400 V |
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