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AN2344 датащи(PDF) 12 Page - STMicroelectronics

номер детали AN2344
подробное описание детали  Power MOSFET avalanche characteristics and ratings
PDF  27 Pages
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производитель  STMICROELECTRONICS [STMicroelectronics]
домашняя страница  http://www.st.com
Logo STMICROELECTRONICS - STMicroelectronics

AN2344 датащи(HTML) 12 Page - STMicroelectronics

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Datasheet avalanche ratings
AN2344
12/27
have to be taken into consideration. These are mainly systemic in nature because the
datasheet thermal impedance is the response of the userfs system to a rectangular power
pulse, while maintaining the package case temperature at 25°C. This response can be
expressed as follows:
Equation 1
where,
∆TJC= Change in junction-case temperature
ZthJC= Rectangular pulse derived from triangular pulse
t= Triangular and Rectangular response time, and
P= Power dissipated
The application of Equation 1, without any modification cannot give precise information. In
fact, a comparison between a rectangular and a triangular power pulse (both with the same
peak), indicates that the peak temperature between them is quite different (see Figure 7.).
To use the Zth, the triangular pulse can be approximated as rectangular pulse, with scaled
amplitude and width.
Another important concern about the use of thermal impedance is that usually it is
experimentally and theoretically calculated according to the ON state of the device, so the
normal power distribution within the device may be different from the one that occurs during
the avalanche state.
ST's approach to an EAS statement starts from a theoretical thermal model of the die with
some experimental verifications. The TJ(max) during an avalanche may be sterting from:
Equation 2
where:
tAV = Avalanche time (s),
A = die area (m2),
P0 = peak power (W), and
K= the silicon‘s thermal constant (Wm-2 s1/2 K-1)
This solution is derived from the general heat transmission equation (Fourier equation) for
the special case where an infinite media (mono-dimensional case) is subordinated to a
short rectangular power source pulse and uniformly distributed over a die area.
Equation 2, when it is applied to a triangular power pulse, is a simple and good
approximation to use for the temperature increase calculation within the device during the
avalanche operation, if the pulse is of short duration.
∆T
jc
Zth
jc t
()P
=
T
j
P
0
AK
-------- t
av
T
starting
+
=



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