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DCR750F85 датащи(PDF) 2 Page - Dynex Semiconductor |
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DCR750F85 датащи(HTML) 2 Page - Dynex Semiconductor |
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2 / 11 page ![]() SEMICONDUCTOR DCR750F85 2/11 www.dynexsemi.com CURRENT RATINGS Tcase = 60°C unless stated otherwise Symbol Parameter Test Conditions Max. Units Double Side Cooled IT(AV) Mean on-state current Half wave resistive load 733 A IT(RMS) RMS value - 1151 A IT Continuous (direct) on-state current - 1139 A SURGE RATINGS Symbol Parameter Test Conditions Max. Units ITSM Surge (non-repetitive) on-state current 10ms half sine, Tcase = 125°C 9.8 kA I 2t I 2t for fusing VR = 0 0.48 MA 2s THERMAL AND MECHANICAL RATINGS Symbol Parameter Test Conditions Min. Max. Units Rth(j-c) Thermal resistance – junction to case Double side cooled DC - 0.0184 °C/W Single side cooled Anode DC - 0.0333 °C/W Cathode DC - 0.0418 °C/W Rth(c-h) Thermal resistance – case to heatsink Clamping force 23 kN Double side - 0.004 °C/W (with mounting compound) Single side - 0.008 °C/W Tvj Virtual junction temperature Blocking VDRM / VRRM - 125 °C Tstg Storage temperature range -55 125 °C Fm Clamping force 20.0 25.0 kN |
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