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AN4217 датащи(PDF) 9 Page - STMicroelectronics |
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AN4217 датащи(HTML) 9 Page - STMicroelectronics |
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9 / 22 page ![]() AN4217 STEVAL-ISV0x8V1 parallel and series connection Doc ID 024010 Rev 1 9/22 Equation 12 In this case the system is at its limit. A lower irradiation will impact VOUT1 and/or VOUT3 which are already at the limit (40 V) imposed by R3/R4 partitioning. Example 3: Panel 2 is completely shaded. In this case, the maximum VOUT available is 80 V (VOUT1+VOUT3). On the STEVAL-ISV018V1 application board, bypass diode (D4) around the second SPV1020 allows IOUT to flow. Figure 12 shows power conversion efficiency when VMPP = 12 V and IMPP ranges from 1 A to 8 A (in steps of 1 A). Power ranges between 36 W and 288 W. 30 40 0.75 Vout1= V = V Vout 10 75 . 0 5 . 7 2 = = Vout3= 3 * 4 1 1 * 4 1 2 Vout Vout Vout = = W Pout Pout 30 2 1 = = W Pin Pout 5 . 7 1 4 1 2 = = W Pout Pout Pout Pout 5 . 67 3 2 1 = + + = A Vout Pout Iout 75 . 0 90 5 . 67 = = = |
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