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поискавой системы для электроныых деталей |
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поискавой системы для электроныых деталей |
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AN3352 датащи(PDF) 11 Page - STMicroelectronics |
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AN3352 датащи(HTML) 11 Page - STMicroelectronics |
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11 / 26 page  AN3352 Component selection guidelines Doc ID 018526 Rev 3 11/26 2 Component selection guidelines The LNBH24L application schematic in Figure 6 shows the typical configuration for a single LNB power supply. Note: TVS D6 diode to be used if surge protection is required (see Section 2.4). Figure 6. LNBH24L typical application circuit with internal tone generator D3 L1 Vin 12V to LNB 500mA max PDC LX Vup VoRX EXTM C1 LNBH24L (sections A/B) P-GND A-GND D1 C10 220nF Vcc-L Vcc C8 220nF VoTX ISEL R2 (RSEL) 15kOhm Byp C11 220nF EXTM C15 47 nF R9 2KOhm D3 D3 L1 Vin 12V to LNB 500mA max D2 D2 D2 PDC LX Vup VoRX EXTM C1 P-GND A-GND P-GND A-GND D1 D1 C10 220nF C10 220nF Vcc-L Vcc C8 220nF Vcc-L Vcc C8 220nF C8 220nF C15 47 nF R9 R9 C6 2.2µF C6 C3 C3 C3 I2C Bus SCL ADDR TTX { SDA DSQIN Tone Enable control TTL D4 D3 L1 Vin 12V to LNB 500mA max PDC LX Vup VoRX EXTM C1 LNBH24L (sections A/B) P-GND A-GND D1 C10 220nF Vcc-L Vcc C8 220nF VoTX ISEL R2 (RSEL) 15kOhm Byp C11 220nF EXTM C15 47 nF R9 2KOhm D3 D3 L1 Vin 12V to LNB 500mA max D2 D2 D2 D2 D2 D2 PDC LX Vup VoRX EXTM C1 P-GND A-GND P-GND A-GND D1 D1 C10 220nF C10 220nF Vcc-L Vcc C8 220nF Vcc-L Vcc C8 220nF C8 220nF C15 47 nF R9 R9 C6 2.2µF C6 C3 C3 C3 C6 2.2µF C6 C3 C3 C3 C3 C3 C3 I2C Bus SCL ADDR TTX { SDA I2C Bus SCL ADDR TTX { SDA DSQIN Tone Enable control TTL DSQIN Tone Enable control TTL D4 D4 Table 4. LNBH24L demonstration board BOM list Index Quantity Reference Value / generic part number Package 1 2 RSELA, RSELB 15 k Ω 1/8 W (see Section 2.2) 1206 2 2 R5A, R5B 2.2 k Ω 1/8 W (see Section 2.7) 1206 3 2 R7A, R7B 22 Ω 1/2 W (see Section 2.7) 1206 4 2 R8A, R8B 150 Ω 1/2 W (see Section 2.7) 1206 5 2 R9A, R9B 1.5 k Ω 1/8 W (see Section 2.8) 1206 6 4 C8, C10A, C10B, C11 0.22 µF 1206 7 2 C15A, C15B 47 nF 1206 8 2 C14A, C15B 1 nF 1206 9 2 C4A, C4B, C6A, C6B 0.47 µF (see Section 2.5) 1206 10 1 C1 100 µF > 25 V ESR = 150 m Ω − 350 mΩ higher value is suitable (see Section 2.6) El.Al. Radial |
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