2SC2335 datasheet(3/8 Pages) RENESAS

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1998

Document No. D14861EJ2V0DS00 (2nd edition)

Date Published April 2002 N CP(K)

Printed in Japan

SILICON POWER TRANSISTOR

2SC2335

NPN SILICON TRIPLE DIFFUSED TRANSISTOR

FOR HIGH-SPEED HIGH-VOLTAGE SWITCHING

DATA SHEET

2002

The 2SC2335 is a mold power transistor developed for high-speed

high-voltage switching, and is ideal for use as a driver in devices such

as switching regulators, DC/DC converters, and high-frequency power

amplifiers.

FEATURES

• Low collector saturation voltage: VCE(sat) = 1.0 V MAX. @IC = 3.0 A

• Fast switching speed: tf = 1.0

µs MAX. @IC = 3.0 A

• Wide base reverse-bias SOA: VCEX(SUS)1 = 450 V MIN. @IC = 3.0 A

ABSOLUTE MAXIMUM RATINGS (TA = 25

°°°°C)

Parameter

Symbol

Conditions

Ratings

Unit

Collector to base voltage

VCBO

500

Collector to emitter voltage

VCEO

400

Emitter to base voltage

VEBO

7.0

Collector current (DC)

IC(DC)

7.0

Collector current (pulse)

IC(pulse)

≤ 300

µs,

duty cycle

≤ 10%

Base current (DC)

IB(DC)

3.5

TC = 25

°C

Total power dissipation

TA = 25

°C

1.5

Junction temperature

150

°C

Storage temperature

Tstg

−55 to +150

°C

ORDERING INFORMATION

Part No.

Package

2SC2335

TO-220AB

(TO-220AB)

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