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AN3014 датащи(PDF) 17 Page - STMicroelectronics |
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AN3014 датащи(HTML) 17 Page - STMicroelectronics |
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17 / 29 page ![]() AN3014 Thermal map Doc ID 16064 Rev 2 17/29 5 Thermal map In order to check design reliability, thermal mapping by means of an IR camera was done. Below, thermal measurements of the component side of the board at nominal input voltage are shown. The pointers on the images have been placed across key components. The ambient temperature during both measurements was 27 °C. Figure 16. Thermal map at 115 Vac - 60 Hz - full load Figure 17. Thermal map at 230 Vac - 50 Hz - full load The pictures highlight that although both the synchronous rectifier MOSFETs at secondary side are working without a heatsink, their operating case temperature is lower than 60 °C. Table 4. Thermal map reference points Point Reference Description A L1 EMI filtering inductor B D1 Bridge rectifier C L2 PFC inductor D D4 PFC output diode E Q3 Resonant high-side MOSFET F T1 Resonant power transformer G Q11 Output rectifier MOSFETs (hottest spot) |
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