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UM0004 датащи(PDF) 2 Page - Unitpower Technology Limited

номер детали UM0004
подробное описание детали  N-Ch 100V Fast Switching MOSFETs
PDF  4 Pages
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производитель  UNITPOWER [Unitpower Technology Limited]
домашняя страница  http://www.unitpower.cn
Logo UNITPOWER - Unitpower Technology Limited

UM0004 датащи(HTML) 2 Page - Unitpower Technology Limited

  UM0004 Datasheet HTML 1Page - Unitpower Technology Limited UM0004 Datasheet HTML 2Page - Unitpower Technology Limited UM0004 Datasheet HTML 3Page - Unitpower Technology Limited UM0004 Datasheet HTML 4Page - Unitpower Technology Limited  
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QM0004S
2
N-Ch 100V Fast Switching MOSFETs
Symbol
Parameter
Conditions
Min.
Typ.
Max.
Unit
BVDSS
Drain-Source Breakdown Voltage
VGS=0V , ID=250uA
100
---
---
V
△
BVDSS/△TJ BVDSS Temperature Coefficient
Reference to 25℃ , ID=1mA
---
0.098
---
V/℃
RDS(ON)
Static Drain-Source On-Resistance
2
VGS=10V , ID=2A
---
90
112
m
Ω
VGS=4.5V , ID=1A
---
95
120
m
Ω
VGS(th)
Gate Threshold Voltage
VGS=VDS , ID =250uA
1.0
1.5
2.5
V
△
VGS(th)
VGS(th) Temperature Coefficient
---
-4.57
---
mV/℃
IDSS
Drain-Source Leakage Current
VDS=80V , VGS=0V , TJ=25℃
---
---
1
uA
VDS=80V , VGS=0V , TJ=55℃
---
---
5
IGSS
Gate-Source Leakage Current
VGS=±20V , VDS=0V
---
---
±
100
nA
gfs
Forward Transconductance
VDS=5V , ID=2A
---
20
---
S
Rg
Gate Resistance
VDS=0V , VGS=0V , f=1MHz
---
2
4
Ω
Qg
Total Gate Charge (10V)
VDS=80V , VGS=10V , ID=2A
---
26.2
36.7
nC
Qgs
Gate-Source Charge
---
3.8
5.32
Qgd
Gate-Drain Charge
---
4.8
6.7
Td(on)
Turn-On Delay Time
VDD=50V , VGS=10V , RG=3.3Ω
ID=2A
---
4.2
8.4
ns
Tr
Rise Time
---
7.6
14
Td(off)
Turn-Off Delay Time
---
41
82
Tf
Fall Time
---
14
28
Ciss
Input Capacitance
VDS=15V , VGS=0V , f=1MHz
---
1535
2149
pF
Coss
Output Capacitance
---
60
84
Crss
Reverse Transfer Capacitance
---
37
52
Symbol
Parameter
Conditions
Min.
Typ.
Max.
Unit
EAS
Single Pulse Avalanche Energy
5
VDD=25V , L=0.1mH , IAS=5A
1.5
---
---
mJ
Symbol
Parameter
Conditions
Min.
Typ.
Max.
Unit
IS
Continuous Source Current
1,6
VG=VD=0V , Force Current
---
---
2.5
A
ISM
Pulsed Source Current
2,6
---
---
10
A
VSD
Diode Forward Voltage
2
VGS=0V , IS=1A , TJ=25℃
---
---
1.2
V
trr
Reverse Recovery Time
IF=2A , dI/dt=100A/µs , TJ=25℃
---
35
---
nS
Qrr
Reverse Recovery Charge
---
17
---
nC
Electrical Characteristics (TJ=25 ℃, unless otherwise noted)
Diode Characteristics
Guaranteed Avalanche Characteristics
Note :
1.The data tested by surface mounted on a 1 inch
2 FR-4 board with 2OZ copper.
2.The data tested by pulsed , pulse width
≦ 300us , duty cycle ≦ 2%
3.The EAS data shows Max. rating . The test condition is VDD=25V,VGS=10V,L=0.1mH,IAS=11A
4.The power dissipation is limited by 150℃ junction temperature
5.The Min. value is 100% EAS tested guarantee.
6.The data is theoretically the same as ID and IDM , in real applications , should be limited by total power dissipation.
UM0004



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