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поискавой системы для электроныых деталей |
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поискавой системы для электроныых деталей |
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AN2798 датащи(PDF) 28 Page - STMicroelectronics |
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AN2798 датащи(HTML) 28 Page - STMicroelectronics |
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28 / 38 page  PM6670AS evaluation tests AN2798 28/38 Latched thermal shutdown If the junction temperature rises up to 150 deg, the thermal protection circuit turns off the device and discharges the output rails by performing the non-tracking discharge soft-end. 8.9 VDDQ current limit The valley current limit avoids any high side turning on if the inductor current is higher than the programmed value. This current limit can be designed with the following equation: The current sensing is performed by comparing the voltage drop in the low-side MOSFET, during the TOFF period, with the voltage drop given by an injected current and the current limit resistor. Figure 31. VDDQ, VTT, VTTREF and inductor current, thermal shutdown, pulse-skip mode DSon LS ILIM CL R R I , 100µA x = DSon LS ILIM CL R R I , 100µA x = |
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