BC817 datasheet(1/2 Pages) KEC

номер детали	BC817

подробное описание детали	EPITAXAIL PLANAR NPN TRANSISTOR(for General Purpose, Switching)

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производитель	KEC [KEC(Korea Electronics)]

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2009. 2. 19

1/2

SEMICONDUCTOR

TECHNICAL DATA

BC817

EPITAXIAL PLANAR NPN TRANSISTOR

Revision No : 5

GENERAL PURPOSE APPLICATION.

SWITCHING APPLICATION.

FEATURES

・Complementary to BC807.

MAXIMUM RATING (Ta=25

℃)

DIM

MILLIMETERS

SOT-23

A

B

C

D

E

2.93 0.20

1.30+0.20/-0.15

0.40+0.15/-0.05

2.40+0.30/-0.20

G

1.90

H

J

K

L

M

N

0.95

0.13+0.10/-0.05

0.00 ~ 0.10

0.55

Q

0.1 MAX

0.20 MIN

1.00+0.20/-0.10

M

E

1

2

3

B

1.30 MAX

LL

PP

P7

+

_

Q

1. EMITTER

2. BASE

3. COLLECTOR

ELECTRICAL CHARACTERISTICS (Ta=25

℃)

Note : hFE(1) Classification

16:100

～250 , 25:160～400 , 40:250～630

CHARACTERISTIC

SYMBOL

TEST CONDITION

MIN.

TYP.

MAX.

UNIT

Collector Cut-off Current

ICBO

VCB=20V, IE=0

-

0.1

μA

Emitter Cut-off Current

IEBO

VEB=5V, IC=0

-

0.1

μA

DC Current Gain (Note)

hFE(1)

VCE=1V, IC=100mA

100

-

630

hFE(2)

VCE=1V, IC=500mA

40

-

Collector-Emitter Saturation Voltage

VCE(sat)

IC=500mA, IB=50mA

-

0.7

V

Base-Emitter Voltage

VBE

VCE=1V, IC=500mA

-

1.2

V

Transition Frequency

fT

VCE=5V, IC=10mA, f=100MHz

100

-

MHz

Collector Output Capacitance

Cob

VCB=10V, IE=0, f=1MHz

-

5

-

pF

CHARACTERISTIC

SYMBOL

RATING

UNIT

Collector-Base Voltage

VCBO

50

V

Collector-Emitter Voltage

VCEO

45

V

Emitter-Base Voltage

VEBO

5

V

Collector Current

IC

800

mA

Emitter Current

IE

-800

mA

Collector Power Dissipation

PC*

350

mW

Junction Temperature

Tj

150

℃

Storage Temperature Range

Tstg

-55

～150

℃

TYPE

BC817-16

BC817-25

BC817-40

MARK

6A

6B

6C

* : Package Mounted On 99.9% Alumina 10

×8×0.6mm.

MARK SPEC

Type Name

Marking

Lot No.

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Аналогичный номер детали - BC817

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