BC807 datasheet(1/2 Pages) KEC

номер детали	BC807

подробное описание детали	EPITAXIAL PLANAR PNP TRANSISTOR (GENERAL PURPOSE, SWITCHING)

PDF	2 Pages

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производитель	KEC [KEC(Korea Electronics)]

домашняя страница	http://www.keccorp.com

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2009. 2. 19

1/2

SEMICONDUCTOR

TECHNICAL DATA

BC807

EPITAXIAL PLANAR PNP TRANSISTOR

Revision No : 5

GENERAL PURPOSE APPLICATION.

SWITCHING APPLICATION.

FEATURES

・Complementary to BC817.

MAXIMUM RATING (Ta=25

℃)

DIM

MILLIMETERS

SOT-23

A

B

C

D

E

2.93 0.20

1.30+0.20/-0.15

0.40+0.15/-0.05

2.40+0.30/-0.20

G

1.90

H

J

K

L

M

N

0.95

0.13+0.10/-0.05

0.00 ~ 0.10

0.55

Q

0.1 MAX

0.20 MIN

1.00+0.20/-0.10

M

E

1

2

3

B

1.30 MAX

LL

PP

P7

+

_

Q

1. EMITTER

2. BASE

3. COLLECTOR

ELECTRICAL CHARACTERISTICS (Ta=25

℃)

Note : hFE Classification

16:100

～250 , 25:160～400 , 40:250～630

CHARACTERISTIC

SYMBOL

TEST CONDITION

MIN.

TYP.

MAX.

UNIT

Collector Cut-off Current

ICBO

VCB=-20V, IE=0

-

-0.1

μA

Emitter Cut-off Current

IEBO

VEB=-5V, IC=0

-

-0.1

μA

DC Current Gain (Note)

hFE(1)

VCE=-1V, IC=-100mA

100

-

630

hFE(2)

VCE=-1V, IC=-500mA

40

-

Collector-Emitter Saturation Voltage

VCE(sat)

IC=-500mA, IB=-50mA

-

-0.7

V

Base-Emitter Voltage

VBE

VCE=-1V, IC=-500mA

-

-1.2

V

Transition Frequency

fT

VCE=-5V, IC=-10mA, f=100MHz

80

-

MHz

Collector Output Capacitance

Cob

VCB=-10V, IE=0, f=1MHz

-

9

-

pF

CHARACTERISTIC

SYMBOL

RATING

UNIT

Collector-Base Voltage

VCBO

-50

V

Collector-Emitter Voltage

VCEO

-45

V

Emitter-Base Voltage

VEBO

-5

V

Collector Current

IC

-800

mA

Emitter Current

IE

800

mA

Collector Power Dissipation

PC*

350

mW

Junction Temperature

Tj

150

℃

Storage Temperature Range

Tstg

-55

～150

℃

TYPE.

BC807-16

BC807-25

BC807-40

MARK

5A

5B

5C

* : Package Mounted On 99.9% Alumina 10

×8×0.6mm.

MARK SPEC

Type Name

Marking

Lot No.

Аналогичный номер детали - BC807

производитель	номер детали	датащи	подробное описание детали
NXP Semiconductors	BC807	47Kb / 8P	PNP general purpose transistor 1999 Apr 08
Transys Electronics	BC807	303Kb / 2P	PNP SURFACE MOUNT TRANSISTOR
Zetex Semiconductors	BC807	36Kb / 1P	PNP SILICON PLANAR MEDIUM POWER TRANSISTOR
Siemens Semiconductor G...	BC807	131Kb / 5P	PNP Silicon AF Transistors (For general AF applications High collector current High current gain)
Fairchild Semiconductor	BC807	72Kb / 6P	Switching and Amplifier Applications

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Аналогичное описание - BC807

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