BC637 datasheet(1/1 Pages) KEC

номер детали	BC637

подробное описание детали	EPITAXIAL PLANAR NPN TRANSISTOR(HIGH CURRENT TRANSISTORS)

PDF	1 Pages

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производитель	KEC [KEC(Korea Electronics)]

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1 / 1 page

2000. 10. 2

1/1

SEMICONDUCTOR

TECHNICAL DATA

BC637

EPITAXIAL PLANAR NPN TRANSISTOR

Revision No : 0

HIGH CURRENT TRANSISTORS.

FEATURES

Complementary to BC638.

MAXIMUM RATING (Ta=25 )

TO-92

DIM

MILLIMETERS

A

B

C

D

F

G

H

J

K

L

4.70 MAX

4.80 MAX

3.70 MAX

0.45

1.00

1.27

0.85

0.45

14.00 0.50

0.55 MAX

2.30

D

1

2

3

B

K

G

H

F

E

C

E

N

0.45 MAX

M

1.00

N

1. EMITTER

2. COLLECTOR

3. BASE

+_

ELECTRICAL CHARACTERISTICS (Ta=25 )

* Pulse Test : Pulse Width 300 S, Duty Cycle 2.0%

CHARACTERISTIC

SYMBOL

TEST CONDITION

MIN.

TYP.

MAX.

UNIT

Collector Cut-off Current

ICBO

VCB=30V, IE=0

-

100

nA

Collector-Emitter Breakdown Voltage *

V(BR)CEO

IC=10mA, IB=0

60

-

V

Collector-Base Breakdown Voltage

V(BR)CBO

IC=100 A, IE=0

60

-

V

Emitter-Base Breakdown Voltage

V(BR)EBO

IE=10 A, IC=0

5.0

-

V

DC Current Gain

hFE

VCE=2V, IC=150mA

40

-

160

Collector-Emitter Saturation Voltage

VCE(sat)

IC=500mA, IB=50mA

-

0.5

V

Base-Emitter Voltage

VBE

VCE=2V, IC=500mA

-

1.0

V

Transition Frequency

fT

VCE=2V, IC=50mA, f=100MHz

-

200

-

MHz

Input Capacitance

Cib

VEB=0.5V, IC=0, f=1MHz

-

50

-

pF

Collector Output Capacitance

Cob

VCB=10V, IE=0, f=1MHz

-

7.0

-

pF

CHARACTERISTIC

SYMBOL

RATING

UNIT

Collector-Base Voltage

VCBO

60

V

Collector-Emitter Voltage

VCEO

60

V

Emitter-Base Voltage

VEBO

5

V

Collector Current

IC

500

mA

Collector Power Dissipation

PC

625

mW

Junction Temperature

Tj

150

Storage Temperature

Tstg

-55 150

Аналогичный номер детали - BC637

производитель	номер детали	датащи	подробное описание детали
Motorola, Inc	BC637	116Kb / 4P	High Current Transistors
NXP Semiconductors	BC637	43Kb / 8P	NPN medium power transistors 1999 Apr 23
Siemens Semiconductor G...	BC637	126Kb / 5P	NPN Silicon AF Transistors (High current gain High collector current)
Fairchild Semiconductor	BC637	55Kb / 4P	NPN EPITAXIAL SILICON TRANSISTOR
Micro Electronics	BC637	184Kb / 2P	COMPLEMENTARY SILICON TRANSISTORS

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Аналогичное описание - BC637

производитель	номер детали	датащи	подробное описание детали
KEC(Korea Electronics)	KTC3203	277Kb / 2P	EPITAXIAL PLANAR NPN TRANSISTOR (HIGH CURRENT)
	KTC3204	115Kb / 1P	EPITAXIAL PLANAR NPN TRANSISTOR (HIGH CURRENT)
	KTC3205	325Kb / 2P	EPITAXIAL PLANAR NPN TRANSISTOR (HIGH CURRENT)
	KTC3210	69Kb / 2P	EPITAXIAL PLANAR NPN TRANSISTOR (HIGH CURRENT)
	KTC3211	69Kb / 2P	EPITAXIAL PLANAR NPN TRANSISTOR (HIGH CURRENT)
	KTC4376	279Kb / 2P	EPITAXIAL PLANAR NPN TRANSISTOR (HIGH CURRENT)
	KTC8050	272Kb / 2P	EPITAXIAL PLANAR NPN TRANSISTOR (HIGH CURRENT)
	KTD1003	291Kb / 2P	EPITAXIAL PLANAR NPN TRANSISTOR (HIGH CURRENT)
	KTD1028	275Kb / 2P	EPITAXIAL PLANAR NPN TRANSISTOR (HIGH CURRENT)
	MPS8050	69Kb / 2P	EPITAXIAL PLANAR NPN TRANSISTOR (HIGH CURRENT)

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BC637 датащи(PDF) 1 Page - KEC(Korea Electronics)

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Аналогичный номер детали - BC637

Аналогичное описание - BC637

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