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AN1330 датащи(PDF) 20 Page - STMicroelectronics |
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AN1330 датащи(HTML) 20 Page - STMicroelectronics |
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20 / 31 page ![]() Application information AN1330 20/31 5.3 Thermal considerations The dissipated power of the device is tied to three different sources: ● switching losses due to the not negligible RDSON. These are equal to: Equation 21 Where D is the duty cycle of the application. Note that the duty cycle is theoretically given by the ratio between VOUT and VIN, but in practice it is substantially higher than this value to compensate for the losses of the overall application. For this reason, the switching losses related to the RDSON increase compared to an ideal case. ● Switching losses due to turning ON and OFF. These are derived using the following equation: Equation 22 where TON and TOFF are the overlap times of the voltage across the power switch and the current flowing into it during the turn ON and turn OFF phases. TSW is the equivalent switching time. ● Quiescent current losses. Equation 23 Where IQ is the quiescent current. ● Example: –VIN = 5 V –VOUT = 3.3 V –IOUT = 1 A RDSON has a typical value of 0.25 Ω @ 25 °C and increases up to a maximum value of 0.5 Ω @ 150 °C. We can consider a value of 0.4 Ω. TSW is approximately 120 ns. IQ has a typical value of 2.5 mA @ VIN = 12 V. The overall losses are: Equation 24 The junction temperature of the device will be: Equation 25 where TA is the ambient temperature and RthJ-A is the thermal resistance junction-to- ambient. P ON R DS on () I OUT () 2 • D • = P SW V IN I OUT • T ON T OFF + () 2 ----------------------------------------- • F SW • V IN I OUT • T SW • F SW • == P Q V IN I Q • = P TOT R DSON I OUT () 2 DV IN I OUT T SW F SW V IN I Q = ⋅ + ⋅⋅ ⋅ + ⋅⋅ = 0.4 1 2 0.7 5 1 120 10 9 – 250 10 3 52.5 10 3 – 0.44W ≅ ⋅⋅ + ⋅⋅ ⋅ ⋅ ⋅ + ⋅⋅ T J T A Rth JA – P • TOT + = |
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