поискавой системы для электроныых деталей
  Russian  ▼
ALLDATASHEETRU.COM

X  

Preview PDF HTML

UI0008 датащи(PDF) 2 Page - Unitpower Technology Limited

номер детали UI0008
подробное описание детали  N-Ch 100V Fast Switching MOSFETs
PDF  4 Pages
Scroll/Zoom Zoom In 100%  Zoom Out
производитель  UNITPOWER [Unitpower Technology Limited]
домашняя страница  http://www.unitpower.cn
Logo UNITPOWER - Unitpower Technology Limited

UI0008 датащи(HTML) 2 Page - Unitpower Technology Limited

  UI0008 Datasheet HTML 1Page - Unitpower Technology Limited UI0008 Datasheet HTML 2Page - Unitpower Technology Limited UI0008 Datasheet HTML 3Page - Unitpower Technology Limited UI0008 Datasheet HTML 4Page - Unitpower Technology Limited  
Zoom Inzoom in Zoom Outzoom out
 2 / 4 page
background image
2
N-Ch 100V Fast Switching MOSFETs
Symbol
Parameter
Conditions
Min.
Typ.
Max.
Unit
BVDSS
Drain-Source Breakdown Voltage
VGS=0V , ID=250uA
100
---
---
V
△
BVDSS/△TJ BVDSS Temperature Coefficient
Reference to 25℃ , ID=1mA
---
0.0672
---
V/℃
RDS(ON)
Static Drain-Source On-Resistance
2
VGS=10V , ID=5A
---
260
310
m
Ω
VGS=4.5V , ID=3A
---
270
320
VGS(th)
Gate Threshold Voltage
VGS=VDS , ID =250uA
1.0
1.5
2.5
V
△
VGS(th)
VGS(th) Temperature Coefficient
---
-4.12
---
mV/℃
IDSS
Drain-Source Leakage Current
VDS=80V , VGS=0V , TJ=25℃
---
---
10
uA
VDS=80V , VGS=0V , TJ=55℃
---
---
100
IGSS
Gate-Source Leakage Current
VGS=±20V , VDS=0V
---
---
±
100
nA
gfs
Forward Transconductance
VDS=5V , ID=3A
---
5.4
---
S
Rg
Gate Resistance
VDS=0V , VGS=0V , f=1MHz
---
2.5
5
Ω
Qg
Total Gate Charge (10V)
VDS=80V , VGS=10V , ID=5A
---
9.6
13.4
nC
Qgs
Gate-Source Charge
---
1.83
2.56
Qgd
Gate-Drain Charge
---
1.85
2.6
Td(on)
Turn-On Delay Time
VDD=50V , VGS=10V , RG=3.3Ω
ID=5A
---
1.4
2.8
ns
Tr
Rise Time
---
30.6
55
Td(off)
Turn-Off Delay Time
---
11.2
22
Tf
Fall Time
---
6
12
Ciss
Input Capacitance
VDS=15V , VGS=0V , f=1MHz
---
508
711
pF
Coss
Output Capacitance
---
29
41
Crss
Reverse Transfer Capacitance
---
16.4
23
Symbol
Parameter
Conditions
Min.
Typ.
Max.
Unit
IS
Continuous Source Current
1,4
VG=VD=0V , Force Current
---
---
5.4
A
ISM
Pulsed Source Current
2,4
---
---
11
A
VSD
Diode Forward Voltage
2
VGS=0V , IS=1A , TJ=25℃
---
---
1.2
V
trr
Reverse Recovery Time
IF=5A , dI/dt=100A/µs , TJ=25℃
---
20
---
nS
Qrr
Reverse Recovery Charge
---
19
---
nC
Electrical Characteristics (TJ=25 ℃, unless otherwise noted)
Diode Characteristics
Note :
1.The data tested by surface mounted on a 1 inch
2 FR-4 board with 2OZ copper.
2.The data tested by pulsed , pulse width
≦ 300us , duty cycle ≦ 2%
3.The power dissipation is limited by 150℃ junction temperature
4.The data is theoretically the same as ID and IDM , in real applications , should be limited by total power dissipation.
UI0008



Html Pages

1 2 3 4


датащи скачать

Go To PDF Page


ссылки URL



Вашему бизинису помогли Аллдатащит?  [ DONATE ] 

Что такое Аллдатащит   |   реклама   |   контакт   |   Конфиденциальность   |   Ссылка на техническое описание    |   обмен ссыками   |   поиск по производителю
All Rights Reserved©Alldatasheet.com


Mirror Sites
English : Alldatasheet.com  |   English : Alldatasheet.net  |   Chinese : Alldatasheetcn.com  |   German : Alldatasheetde.com  |   Japanese : Alldatasheet.jp
Russian : Alldatasheetru.com  |   Korean : Alldatasheet.co.kr  |   Spanish : Alldatasheet.es  |   French : Alldatasheet.fr  |   Italian : Alldatasheetit.com
Portuguese : Alldatasheetpt.com  |   Polish : Alldatasheet.pl  |   Vietnamese : Alldatasheet.vn
Indian : Alldatasheet.in  |   Mexican : Alldatasheet.com.mx  |   British : Alldatasheet.co.uk  |   New Zealand : Alldatasheet.co.nz
Family Site : ic2ic.com  |   icmetro.com