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UD6016 датащи(PDF) 2 Page - Unitpower Technology Limited

номер детали UD6016
подробное описание детали  N-Ch 60V Fast Switching MOSFETs
PDF  4 Pages
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производитель  UNITPOWER [Unitpower Technology Limited]
домашняя страница  http://www.unitpower.cn
Logo UNITPOWER - Unitpower Technology Limited

UD6016 датащи(HTML) 2 Page - Unitpower Technology Limited

  UD6016 Datasheet HTML 1Page - Unitpower Technology Limited UD6016 Datasheet HTML 2Page - Unitpower Technology Limited UD6016 Datasheet HTML 3Page - Unitpower Technology Limited UD6016 Datasheet HTML 4Page - Unitpower Technology Limited  
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N-Ch 60V Fast Switching MOSFETs
Symbol
Parameter
Conditions
Min.
Typ.
Max.
Unit
BVDSS
Drain-Source Breakdown Voltage
VGS=0V , ID=250uA
60
---
---
V
△
BVDSS/△TJ BVDSS Temperature Coefficient
Reference to 25℃ , ID=1mA
---
0.052
---
V/℃
RDS(ON)
Static Drain-Source On-Resistance
2
VGS=10V , ID=30A
---
10
12
m
Ω
VGS=4.5V , ID=15A
---
12
15
VGS(th)
Gate Threshold Voltage
VGS=VDS , ID =250uA
1.2
---
2.5
V
△
VGS(th)
VGS(th) Temperature Coefficient
---
-5.76
---
mV/℃
IDSS
Drain-Source Leakage Current
VDS=48V , VGS=0V , TJ=25℃
---
---
1
uA
VDS=48V , VGS=0V , TJ=55℃
---
---
5
IGSS
Gate-Source Leakage Current
VGS=±20V , VDS=0V
---
---
±
100
nA
gfs
Forward Transconductance
VDS=5V , ID=30A
---
42
---
S
Rg
Gate Resistance
VDS=0V , VGS=0V , f=1MHz
---
1.5
3
Ω
Qg
Total Gate Charge (4.5V)
VDS=48V , VGS=4.5V , ID=15A
---
28.7
40.2
nC
Qgs
Gate-Source Charge
---
10.5
14.7
Qgd
Gate-Drain Charge
---
9.9
14.0
Td(on)
Turn-On Delay Time
VDD=30V , VGS=10V , RG=3.3Ω,
ID=15A
---
10.4
20.8
ns
Tr
Rise Time
---
9.2
16.6
Td(off)
Turn-Off Delay Time
---
63
126
Tf
Fall Time
---
4.8
9.6
Ciss
Input Capacitance
VDS=15V , VGS=0V , f=1MHz
---
3240
4536
pF
Coss
Output Capacitance
---
210
294
Crss
Reverse Transfer Capacitance
---
146
204
Symbol
Parameter
Conditions
Min.
Typ.
Max.
Unit
EAS
Single Pulse Avalanche Energy
5
VDD=25V , L=0.1mH , IAS=30A
77
---
---
mJ
Symbol
Parameter
Conditions
Min.
Typ.
Max.
Unit
IS
Continuous Source Current
1,6
VG=VD=0V , Force Current
---
---
47
A
ISM
Pulsed Source Current
2,6
---
---
100
A
VSD
Diode Forward Voltage
2
VGS=0V , IS=A , TJ=25℃
---
---
1.2
V
trr
Reverse Recovery Time
IF=15A , dI/dt=100A/µs , TJ=25℃
---
18
---
nS
Qrr
Reverse Recovery Charge
---
14
---
nC
Note :
1.The data tested by surface mounted on a 1 inch
2 FR-4 board with 2OZ copper.
2.The data tested by pulsed , pulse width
≦ 300us , duty cycle ≦ 2%
3.The EAS data shows Max. rating . The test condition is VDD=25V,VGS=10V,L=0.1mH,IAS=38A
4.The power dissipation is limited by 150℃ junction temperature
5.The Min. value is 100% EAS tested guarantee.
6.The data is theoretically the same as ID and IDM , in real applications , should be limited by total power dissipation.
Electrical Characteristics (TJ=25 ℃, unless otherwise noted)
Guaranteed Avalanche Characteristics
Diode Characteristics
UD6016



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