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AN4021 датащи(PDF) 4 Page - STMicroelectronics

номер детали AN4021
подробное описание детали  Calculation of reverse losses in a power diode
PDF  10 Pages
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производитель  STMICROELECTRONICS [STMicroelectronics]
домашняя страница  http://www.st.com
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Diode reverse characteristics
AN4021
4/10
Doc ID 022588 Rev 1
1.2
Diode reverse characteristics modeling: IR(VR,Tj), “c”
thermal coefficient
The parameter (IR) increases by an exponential law with the junction temperature. Knowing
a reference point IR(VR,TjRef) and the value of the thermal coefficient “c”, one can easily
calculate the leakage current at a given temperature Tj using the following formula:
Equation 1
Where VR is the reverse “plateau” voltage applied across the diode.
The “c” thermal coefficient represents the leakage current dependence with the junction
temperature. Each diode has its own coefficient that can be calculated using two points as
follows:
Equation 2
In each ST Datasheet, TjRef1 & TjRef2 are respectively 25°C and 125°C.
The “c” coefficient is independent of the reverse voltage VR applied across the diode.
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