| поискавой системы для электроныых деталей |
|
AN2747 датащи(PDF) 35 Page - STMicroelectronics |
|
|
|||||||||||||||||||||||||||||
AN2747 датащи(HTML) 35 Page - STMicroelectronics |
|
35 / 44 page ![]() AN2747 Full bridge design criteria 35/44 The power losses can be divided in two quantities: IGBT losses and diode losses. The IGBT power losses are mainly due to the conduction phase and depend on Vcesat. Equation 15 In the diode the conduction losses (considering a duty cycle of 50%) can be estimated using the following formula: Equation 16 Where: ● PDcond= diode conduction losses ● IF(av)= average forward current ● IF(rms)= RMS forward current P IGBTcond V ce I Fav () ⋅ = P Dcond V to I Fav () rd I 2 Frms () ⋅ + ⋅ = |
|
ссылки URL |
| Вашему бизинису помогли Аллдатащит? [ DONATE ] |
Что такое Аллдатащит | реклама | контакт | Конфиденциальность | Ссылка на техническое описание | обмен ссыками | поиск по производителю All Rights Reserved©Alldatasheet.com |
| Russian : Alldatasheetru.com | Korean : Alldatasheet.co.kr | Spanish : Alldatasheet.es | French : Alldatasheet.fr | Italian : Alldatasheetit.com Portuguese : Alldatasheetpt.com | Polish : Alldatasheet.pl | Vietnamese : Alldatasheet.vn Indian : Alldatasheet.in | Mexican : Alldatasheet.com.mx | British : Alldatasheet.co.uk | New Zealand : Alldatasheet.co.nz |
|
Family Site : ic2ic.com |
icmetro.com |