SSG4842N_15 datasheet(1/2 Pages) SECOS

номер детали	SSG4842N

подробное описание детали	N-Ch Enhancement Mode Power MOSFET

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производитель	SECOS [SeCoS Halbleitertechnologie GmbH]

домашняя страница	http://www.secosgmbh.com

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SSG4842N

23A , 40V , RDS(ON) 9 mΩ

Ω

N-Ch Enhancement Mode Power MOSFET

Elektronische Bauelemente

13-Dec-2011 Rev. A

Page 1 of 2

http://www.SeCoSGmbH.com/

Any changes of specification will not be informed individually.

RoHS Compliant Product

A suffix of “-C” specifies halogen & lead-free

DESCRIPTION

These miniature surface mount MOSFETs

utilize a high cell density trench process to provide

low RDS(on) and to ensure minimal power loss and

heat dissipation.

FEATURES

Low RDS(on) Provides Higher Efficiency And Extends

Battery Life.

Low Thermal Impedance Copper Leadframe

SOIC-8 Saves Board Space

Fast Switching Speed

High Performance Trench Technology

APPLICATION

DC-DC converters and power management

in portable and battery-powered products such as

computers, printers, PCMCIA cards, cellular and

cordless telephones.

PACKAGE INFORMATION

Package

MPQ

Leader Size

SOP-8

2.5K

13 inch

MAXIMUM RATINGS (TA=25°C unless otherwise specified)

Parameter

Symbol

Ratings

Unit

Drain-Source Voltage

VDS

40

V

Gate-Source Voltage

VGS

20

V

Continuous Drain Current

1

TA = 25°C

ID

23

A

TA = 70°C

19

A

Pulsed Drain Current

2

IDM

60

A

Continuous Source Current (Diode Conduction)

1

IS

2.9

A

Total Power Dissipation

1

TA = 25°C

PD

3.1

W

TA = 70°C

2.2

W

Operating Junction & Storage Temperature Range

TJ, TSTG

-55~150

°C

Thermal Resistance Rating

Thermal Resistance Junction-Ambient (Max.)

1

t ≦ 10 sec

RθJA

40

°C / W

Steady State

80

°C / W

Notes:

1.

Surface Mounted on 1” x 1” FR4 Board.

2.

Pulse width limited by maximum junction temperature.

SOP-8

REF.

Millimeter

REF.

Millimeter

Min.

Max.

Min.

Max.

A

5.80

6.20

H

0.35

0.49

B

4.80

5.00

J

0.375 REF.

C

3.80

4.00

K

45°

D

0°

8°

L

1.35

1.75

E

0.40

0.90

M

0.10

0.25

F

0.19

0.25

N

0.25 REF.

G

1.27 TYP.

A

H

B

M

D

C

J

K

F

L

E

N

G

S

D

Аналогичный номер детали - SSG4842N_15

производитель	номер детали	датащи	подробное описание детали
SeCoS Halbleitertechnol...	SSG4842N	121Kb / 2P	23A , 40V , RDS(ON) 9 m N-Ch Enhancement Mode Power MOSFET
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