Elektronische Bauelemente

SSD3055

N-Ch Enhancement Mode Power MOSFET

30-Apr-2012 Rev. B

Page 2 of 4

http://www.SeCoSGmbH.com/

Any changes of specification will not be informed individually.

Parameter

Symbol

Min.

Typ.

Max.

Unit

Teat Conditions

Static

Drain-Source Breakdown Voltage

30

-

-

V

-

0.023

-

V/°C

Reference to 25°C,

Gate-Threshold Voltage

1

-

2.5

V

Forward Transconductance

-

21.6

-

S

Gate-Source Leakage Current

-

-

±100

nA

-

-

1

Drain-Source Leakage Current

-

-

5

μA

-

-

22

Static Drain-Source On-Resistance

2

-

-

35

mΩ

Total Gate Charge

2

-

6.2

-

Gate-Source Charge

-

2.4

-

Gate-Drain (“Miller”) Change

-

2.5

-

nC

Turn-on Delay Time

2

-

3

-

Rise Time

-

7.6

-

Turn-off Delay Time

-

21

-

Fall Time

-

4

-

nS

Input Capacitance

-

572

-

Output Capacitance

-

81

-

Reverse Transfer Capacitance

-

65

-

pF

f =1.0MHz

Guaranteed Avalanche Characteristics

Single Pulse Avalanche Energy

5

EAS

16

-

-

mJ

Source-Drain Diode

Diode Forward Voltage

2

-

-

1.2

V

Continuous Source Current

1,6

-

-

18

A

Pulsed Source Current

2,6

-

-

60

A

Notes:

2. The data tested by pulsed , pulse width ≦ 300μs , duty cycle ≦ 2%

4. The power dissipation is limited by 150°C, junction temperature

5. The Min. value is 100% EAS tested guarantee.