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поискавой системы для электроныых деталей |
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поискавой системы для электроныых деталей |
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IRG4PC50S датащи(PDF) 2 Page - International Rectifier |
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IRG4PC50S датащи(HTML) 2 Page - International Rectifier |
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2 / 8 page  IRG4PC50S 2 www.irf.com Parameter Min. Typ. Max. Units Conditions Qg Total Gate Charge (turn-on) — 180 280 IC = 41A Qge Gate - Emitter Charge (turn-on) — 24 37 nC VCC = 400V See Fig. 8 Qgc Gate - Collector Charge (turn-on) — 61 92 VGE = 15V td(on) Turn-On Delay Time — 33 — tr Rise Time — 30 — TJ = 25°C td(off) Turn-Off Delay Time — 650 980 IC = 41A, VCC = 480V tf Fall Time — 400 600 VGE = 15V, RG = 5.0 Ω Eon Turn-On Switching Loss — 0.72 — Energy losses include "tail" Eoff Turn-Off Switching Loss — 8.27 — mJ See Fig. 9, 10, 14 Ets Total Switching Loss — 8.99 13 td(on) Turn-On Delay Time — 31 — TJ = 150°C, tr Rise Time — 31 — IC = 41A, VCC = 480V td(off) Turn-Off Delay Time — 1080 — VGE = 15V, RG = 5.0 Ω tf Fall Time — 620 — Energy losses include "tail" Ets Total Switching Loss — 15 — mJ See Fig. 11, 14 LE Internal Emitter Inductance — 13 — nH Measured 5mm from package Cies Input Capacitance — 4100 — VGE = 0V Coes Output Capacitance — 250 — pF VCC = 30V See Fig. 7 Cres Reverse Transfer Capacitance — 48 —ƒ = 1.0MHz Parameter Min. Typ. Max. Units Conditions V(BR)CES Collector-to-Emitter Breakdown Voltage 600 —— VVGE = 0V, IC = 250µA V(BR)ECS Emitter-to-Collector Breakdown Voltage T 18 —— VVGE = 0V, IC = 1.0A ∆V(BR)CES/∆TJ Temperature Coeff. of Breakdown Voltage — 0.75 — V/°CVGE = 0V, IC = 1.0mA — 1.28 1.36 IC = 41A VGE = 15V VCE(ON) Collector-to-Emitter Saturation Voltage — 1.62 — IC = 80A See Fig.2, 5 — 1.28 — IC = 41A , TJ = 150°C VGE(th) Gate Threshold Voltage 3.0 — 6.0 VCE = VGE, IC = 250µA ∆VGE(th)/∆TJ Temperature Coeff. of Threshold Voltage — -9.3 — mV/°CVCE = VGE, IC = 250µA gfe Forward Transconductance U 17 34 — SVCE = 100V, IC = 41A —— 250 VGE = 0V, VCE = 600V —— 2.0 VGE = 0V, VCE = 10V, TJ = 25°C —— 1000 VGE = 0V, VCE = 600V, TJ = 150°C IGES Gate-to-Emitter Leakage Current —— ±100 nA VGE = ±20V Electrical Characteristics @ TJ = 25°C (unless otherwise specified) ICES Zero Gate Voltage Collector Current V µA Switching Characteristics @ TJ = 25°C (unless otherwise specified) ns ns T Pulse width ≤ 80µs; duty factor ≤ 0.1%. U Pulse width 5.0µs, single shot. Notes: Q Repetitive rating; V GE = 20V, pulse width limited by max. junction temperature. ( See fig. 13b ) R V CC = 80%(VCES), VGE = 20V, L = 10µH, RG = 5.0Ω, (See fig. 13a) S Repetitive rating; pulse width limited by maximum junction temperature. |
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