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поискавой системы для электроныых деталей |
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поискавой системы для электроныых деталей |
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IRG4PC50K датащи(PDF) 2 Page - International Rectifier |
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IRG4PC50K датащи(HTML) 2 Page - International Rectifier |
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2 / 8 page  IRG4PC50K 2 www.irf.com Parameter Min. Typ. Max. Units Conditions Qg Total Gate Charge (turn-on) — 200 300 IC = 30A Qge Gate - Emitter Charge (turn-on) — 25 38 nC VCC = 400V See Fig.8 Qgc Gate - Collector Charge (turn-on) — 85 130 VGE = 15V td(on) Turn-On Delay Time — 38 — tr Rise Time — 34 — TJ = 25°C td(off) Turn-Off Delay Time — 160 240 IC = 30A, VCC = 480V tf Fall Time — 79 120 VGE = 15V, RG = 5.0Ω Eon Turn-On Switching Loss — 0.49 — Energy losses include "tail" Eoff Turn-Off Switching Loss — 0.68 — mJ See Fig. 9,10,14 Ets Total Switching Loss — 1.12 1.4 tsc Short Circuit Withstand Time 10 —— µs VCC = 400V, TJ = 125°C VGE = 15V, RG = 10Ω , VCPK < 500V td(on) Turn-On Delay Time — 37 — TJ = 150°C, tr Rise Time — 35 — IC = 30A, VCC = 480V td(off) Turn-Off Delay Time — 260 — VGE = 15V, RG = 5.0Ω tf Fall Time — 170 — Energy losses include "tail" Ets Total Switching Loss — 2.34 — mJ See Fig. 11,14 LE Internal Emitter Inductance — 13 — nH Measured 5mm from package Cies Input Capacitance — 3200 — VGE = 0V Coes Output Capacitance — 370 — pF VCC = 30V See Fig. 7 Cres Reverse Transfer Capacitance — 95 —ƒ = 1.0MHz Parameter Min. Typ. Max. Units Conditions V(BR)CES Collector-to-Emitter Breakdown Voltage 600 —— VVGE = 0V, IC = 250µA V(BR)ECS Emitter-to-Collector Breakdown Voltage T 18 —— VVGE = 0V, IC = 1.0A ∆V(BR)CES/∆TJ TemperatureCoeff.ofBreakdownVoltage — 0.47 — V/°CVGE = 0V, IC = 1.0mA — 1.84 2.2 IC = 30A VGE = 15V VCE(ON) Collector-to-EmitterSaturationVoltage — 2.19 — IC = 52A See Fig.2, 5 — 1.79 — IC = 30A , TJ = 150°C VGE(th) Gate Threshold Voltage 3.0 — 6.0 VCE = VGE, IC = 250µA ∆VGE(th)/∆TJ TemperatureCoeff.ofThresholdVoltage — -12 — mV/°CVCE = VGE, IC = 250µA gfe Forward Transconductance U 17 24 — SVCE = 100 V, IC = 30A —— 250 VGE = 0V, VCE = 600V —— 2.0 VGE = 0V, VCE = 10V, TJ = 25°C —— 5000 VGE = 0V, VCE = 600V, TJ = 150°C IGES Gate-to-Emitter Leakage Current —— ±100 n A VGE = ±20V Electrical Characteristics @ TJ = 25°C (unless otherwise specified) ICES Zero Gate Voltage Collector Current V µA Switching Characteristics @ TJ = 25°C (unless otherwise specified) ns ns S Repetitive rating; pulse width limited by maximum junction temperature. T Pulse width ≤ 80µs; duty factor ≤ 0.1%. U Pulse width 5.0µs, single shot. Notes: Q Repetitive rating; VGE = 20V, pulse width limited by max. junction temperature. ( See fig. 13b ) R V CC = 80%(VCES), VGE = 20V, L = 10µH, RG = 5.0Ω |
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