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поискавой системы для электроныых деталей |
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поискавой системы для электроныых деталей |
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IRG4PC40UD датащи(PDF) 2 Page - International Rectifier |
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IRG4PC40UD датащи(HTML) 2 Page - International Rectifier |
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2 / 10 page  IRG4PC40UD Parameter Min. Typ. Max. Units Conditions Qg Total Gate Charge (turn-on) ---- 100 150 IC = 20A Qge Gate - Emitter Charge (turn-on) ---- 16 25 nC VCC = 400V See Fig. 8 Qgc Gate - Collector Charge (turn-on) ---- 40 60 VGE = 15V td(on) Turn-On Delay Time ---- 54 ---- TJ = 25°C tr Rise Time ---- 57 ---- ns IC = 20A, VCC = 480V td(off) Turn-Off Delay Time ---- 110 165 VGE = 15V, RG = 10Ω tf Fall Time ---- 80 120 Energy losses include "tail" and Eon Turn-On Switching Loss ---- 0.71 ---- diode reverse recovery. Eoff Turn-Off Switching Loss ---- 0.35 ---- mJ See Fig. 9, 10, 11, 18 Ets Total Switching Loss ---- 1.10 1.5 td(on) Turn-On Delay Time ---- 40 ---- TJ = 150°C, See Fig. 9, 10, 11, 18 tr Rise Time ---- 52 ---- ns IC = 20A, VCC = 480V td(off) Turn-Off Delay Time ---- 200 ---- VGE = 15V, RG = 10Ω tf Fall Time ---- 130 ---- Energy losses include "tail" and Ets Total Switching Loss ---- 1.6 ---- mJ diode reverse recovery. LE Internal Emitter Inductance ---- 13 ---- nH Measured 5mm from package Cies Input Capacitance ---- 2100 ---- VGE = 0V Coes Output Capacitance ---- 140 ---- pF VCC = 30V See Fig. 7 Cres Reverse Transfer Capacitance ---- 34 ---- ƒ = 1.0MHz trr Diode Reverse Recovery Time ---- 42 60 ns TJ = 25°C See Fig. ---- 74 120 TJ = 125°C 14 IF = 15A Irr Diode Peak Reverse Recovery Current ---- 4.0 6.0 A TJ = 25°C See Fig. ---- 6.5 10 TJ = 125°C 15 VR = 200V Qrr Diode Reverse Recovery Charge ---- 80 180 nC TJ = 25°C See Fig. ---- 220 600 TJ = 125°C 16 di/dt 200A/µs di(rec)M/dt Diode Peak Rate of Fall of Recovery ---- 190 ---- A/µs TJ = 25°C During tb ---- 160 ---- TJ = 125°C Parameter Min. Typ. Max. Units Conditions V(BR)CES Collector-to-Emitter Breakdown Voltage 600 ---- ---- V VGE = 0V, IC = 250µA ∆V(BR)CES/∆TJ Temperature Coeff. of Breakdown Voltage ---- 0.63 ---- V/°C VGE = 0V, IC = 1.0mA VCE(on) Collector-to-Emitter Saturation Voltage ---- 1.72 2.1 IC = 20A VGE = 15V ---- 2.15 ---- V IC = 40A See Fig. 2, 5 ---- 1.7 ---- IC = 20A, TJ = 150°C VGE(th) Gate Threshold Voltage 3.0 ---- 6.0 VCE = VGE, IC = 250µA ∆VGE(th)/∆TJ Temperature Coeff. of Threshold Voltage ---- -13 ---- mV/°C VCE = VGE, IC = 250µA gfe Forward Transconductance 11 18 ---- S VCE = 100V, IC = 20A ICES Zero Gate Voltage Collector Current ---- ---- 250 µA VGE = 0V, VCE = 600V ---- ---- 3500 VGE = 0V, VCE = 600V, TJ = 150°C VFM Diode Forward Voltage Drop ---- 1.3 1.7 V IC = 15A See Fig. 13 ---- 1.2 1.6 IC = 15A, TJ = 150°C IGES Gate-to-Emitter Leakage Current ---- ---- ±100 nA VGE = ±20V Switching Characteristics @ TJ = 25°C (unless otherwise specified) Electrical Characteristics @ TJ = 25°C (unless otherwise specified) |
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