IRG4PC30 datasheet(1/8 Pages) IRF

номер детали	IRG4PC30

подробное описание детали	INSULATED GATE BIPOLAR TRANSISTOR(Vces=600V, Vce(on)typ.=1.59V, @Vge=15V, Ic=17A)

PDF	8 Pages

Scroll/Zoom	100%

производитель	IRF [International Rectifier]

домашняя страница	http://www.irf.com

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Parameter

Max.

Units

VCES

Collector-to-Emitter Breakdown Voltage

600

V

IC @ TC = 25°C

Continuous Collector Current

31

IC @ TC = 100°C

Continuous Collector Current

17

A

ICM

Pulsed Collector Current

Q

120

ILM

Clamped Inductive Load Current

R

120

VGE

Gate-to-Emitter Voltage

± 20

V

EARV

Reverse Voltage Avalanche Energy

S

10

mJ

PD @ TC = 25°C

Maximum Power Dissipation

100

PD @ TC = 100°C

Maximum Power Dissipation

42

TJ

Operating Junction and

-55 to + 150

TSTG

Storage Temperature Range

Soldering Temperature, for 10 seconds

300 (0.063 in. (1.6mm from case )

°C

Mounting torque, 6-32 or M3 screw.

10 lbf•in (1.1N•m)

IRG4PC30F

Fast Speed IGBT

INSULATED GATE BIPOLAR TRANSISTOR

PD 91459B

E

C

G

n-channel

TO-247AC

Features

• Fast: Optimized for medium operating

frequencies ( 1-5 kHz in hard switching, >20

kHz in resonant mode).

• Generation 4 IGBT design provides tighter

parameter distribution and higher efficiency than

Generation 3

• Industry standard TO-247AC package

• Generation 4 IGBT's offer highest efficiency available

• IGBT's optimized for specified application conditions

• Designed to be a "drop-in" replacement for equivalent

industry-standard Generation 3 IR IGBT's

Benefits

VCES = 600V

VCE(on) typ.

= 1.59V

@VGE = 15V, IC = 17A

1229//00

Parameter

Typ.

Max.

Units

RθJC

Junction-to-Case

–––

1.2

RθCS

Case-to-Sink, Flat, Greased Surface

0.24

–––

°C/W

RθJA

Junction-to-Ambient, typical socket mount

–––

40

Wt

Weight

6 (0.21)

–––

g (oz)

Thermal Resistance

Absolute Maximum Ratings

W

www.irf.com

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Аналогичный номер детали - IRG4PC30

производитель	номер детали	датащи	подробное описание детали
International Rectifier	IRG4PC30F	98Kb / 35P	Fit Rate / Equivalent Device Hours
	IRG4PC30FD	210Kb / 10P	INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE(Vces=600V, Vce(on)typ.=1.59V, @Vge=15V, Ic=17A)
	IRG4PC30FD	98Kb / 35P	Fit Rate / Equivalent Device Hours
	IRG4PC30FDPBF	384Kb / 11P	INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Fast CoPack 1GBT
	IRG4PC30FDPBF	385Kb / 11P	INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE

More results

Аналогичное описание - IRG4PC30

производитель	номер детали	датащи	подробное описание детали
International Rectifier	IRG4BC20U	167Kb / 8P	INSULATED GATE BIPOLAR TRANSISTOR(Vces=600V, Vce(on)typ.=1.85V, @Vge=15V, Ic=6.5A)
	IRG4BC30F	167Kb / 8P	INSULATED GATE BIPOLAR TRANSISTOR(Vces=600V, Vce(on)typ.=1.59V, @Vge=15V, Ic=17A)
	IRG4BC30FD	412Kb / 10P	INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE(Vces=600V, Vce(on)typ.=1.59V, @Vge=15V, Ic=17A)
	IRG4BC30K	137Kb / 8P	INSULATED GATE BIPOLAR TRANSISTOR(Vces=600V, Vce(on)typ.=2.21V, @Vge=15V, Ic=16A)
	IRG4BC40U	169Kb / 8P	INSULATED GATE BIPOLAR TRANSISTOR(Vces=600V, Vce(on)typ.=1.72V, @Vge=15V, Ic=20A)
	IRG4PC30FD	210Kb / 10P	INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE(Vces=600V, Vce(on)typ.=1.59V, @Vge=15V, Ic=17A)
	IRG4PC40U	148Kb / 8P	INSULATED GATE BIPOLAR TRANSISTOR(Vces=600V, Vce(on)typ.1.72V, @Vge=15V, Ic=20A)
	IRG4PC50F	146Kb / 8P	INSULATED GATE BIPOLAR TRANSISTOR(Vces=600V, Vce(on)typ.=1.45V, @Vge=15V, Ic=39A)
	IRGBC30F	246Kb / 6P	INSULATED GATE BIPOLAR TRANSISTOR(Vces=600V, @Vge=15V, Ic=17A)
	IRG4BC30FDPBF	3Mb / 11P	Fast CoPack 1GBT ( VCES = 600V , VCE(on)typ. = 1.59V , VGE = 15V , IC = 17A )

More results

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