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поискавой системы для электроныых деталей |
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поискавой системы для электроныых деталей |
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IRFZ44Z датащи(PDF) 2 Page - International Rectifier |
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IRFZ44Z датащи(HTML) 2 Page - International Rectifier |
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2 / 12 page  IRFZ44Z/S/L 2 www.irf.com Notes: Repetitive rating; pulse width limited by max. junction temperature. (See fig. 11). Limited by TJmax, starting TJ = 25°C, L =0.18mH, RG = 25Ω, IAS = 31A, VGS =10V. Part not recommended for use above this value. ISD ≤ 31A, di/dt ≤ 840A/µs, VDD ≤ V(BR)DSS, TJ ≤ 175°C. Pulse width ≤ 1.0ms; duty cycle ≤ 2%.
Coss eff. is a fixed capacitance that gives the same charging time as Coss while VDS is rising from 0 to 80% VDSS . Limited by TJmax , see Fig.12a, 12b, 15, 16 for typical repetitive avalanche performance. This value determined from sample failure population. 100% tested to this value in production. This is applied to D2Pak, when mounted on 1" square PCB ( FR-4 or G-10 Material ). For recommended footprint and soldering techniques refer to application note #AN-994. Rθ is rated at TJ of approximately 90°C. S D G S D G Static @ TJ = 25°C (unless otherwise specified) Parameter Min. Typ. Max. Units V(BR)DSS Drain-to-Source Breakdown Voltage55––– ––– V ∆ΒVDSS/∆TJ Breakdown Voltage Temp. Coefficient ––– 0.054 ––– V/°C RDS(on) Static Drain-to-Source On-Resistance ––– 11.1 13.9 m Ω VGS(th) Gate Threshold Voltage 2.0 ––– 4.0 V gfs Forward Transconductance 22 ––– ––– S IDSS Drain-to-Source Leakage Current ––– ––– 20 µA ––– ––– 250 IGSS Gate-to-Source Forward Leakage ––– ––– 200 nA Gate-to-Source Reverse Leakage ––– ––– -200 Qg Total Gate Charge ––– 29 43 nC Qgs Gate-to-Source Charge ––– 7.2 11 Qgd Gate-to-Drain ("Miller") Charge ––– 12 18 td(on) Turn-On Delay Time ––– 14 ––– ns tr Rise Time ––– 68 ––– td(off) Turn-Off Delay Time ––– 33 ––– tf Fall Time ––– 41 ––– LD Internal Drain Inductance ––– 4.5 ––– nH Between lead, 6mm (0.25in.) LS Internal Source Inductance ––– 7.5 ––– from package and center of die contact Ciss Input Capacitance ––– 1420 ––– pF Coss Output Capacitance ––– 240 ––– Crss Reverse Transfer Capacitance ––– 130 ––– Coss Output Capacitance ––– 830 ––– Coss Output Capacitance ––– 190 ––– Coss eff. Effective Output Capacitance ––– 300 ––– Diode Characteristics Parameter Min. Typ. Max. Units IS Continuous Source Current ––– ––– 51 (Body Diode) A ISM Pulsed Source Current ––– ––– 200 (Body Diode) Ã VSD Diode Forward Voltage ––– ––– 1.2 V trr Reverse Recovery Time ––– 23 35 ns Qrr Reverse Recovery Charge ––– 17 26 nC ton Forward Turn-On Time Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD) VDS = 44V VGS = 10V f ƒ = 1.0MHz, See Fig. 5 VGS = 0V, VDS = 1.0V, ƒ = 1.0MHz VGS = 10V f MOSFET symbol VGS = 0V VDS = 25V VGS = 0V, VDS = 44V, ƒ = 1.0MHz Conditions VGS = 0V, VDS = 0V to 44V TJ = 25°C, IF = 31A, VDD = 28V di/dt = 100A/µs f TJ = 25°C, IS = 31A, VGS = 0V f showing the integral reverse p-n junction diode. VDS = VGS, ID = 250µA VDS = 55V, VGS = 0V VDS = 55V, VGS = 0V, TJ = 125°C RG = 15Ω ID = 31A VDS = 25V, ID = 31A VDD = 28V ID = 31A VGS = 20V VGS = -20V Conditions VGS = 0V, ID = 250µA Reference to 25°C, ID = 1mA VGS = 10V, ID = 31A f |
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