R5F2136CMDFP datasheet(45/61 Pages) RENESAS

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R8C/36M Group

5. Electrical Characteristics

R01DS0086EJ0100 Rev.1.00

Page 45 of 58

Jun 15, 2011

Note:

1. 4.2 V

≤ VCC ≤ 5.5 V, Topr = −20 to 85 °C (N version)/−40 to 85 °C (D version), and f(XIN) = 20 MHz, unless otherwise

specified.

Table 5.18

Electrical Characteristics (1) [4.2 V

≤ VCC ≤ 5.5 V]

Symbol

Parameter

Condition

Standard

Unit

Min.

Typ.

Max.

VOH

Output “H”

voltage

Other than XOUT

Drive capacity High VCC = 5 V IOH =

−20 mA VCC − 2.0

—

VCC

Drive capacity Low VCC = 5 V IOH =

−5 mA

VCC

− 2.0

—

VCC

XOUT

VCC = 5 V

IOH =

−200 µA1.0

—

VCC

VOL

Output “L”

voltage

Other than XOUT

Drive capacity High VCC = 5 V IOL = 20 mA

—

2.0

Drive capacity Low VCC = 5 V IOL = 5 mA

—

2.0

XOUT

VCC = 5 V

IOL = 200

µA—

—

0.5

VT+-VT-

Hysteresis INT0, INT1, INT2,

INT3, INT4,

KI0, KI1, KI2, KI3,

TRAIO, TRCIOA,

TRCIOB, TRCIOC,

TRCIOD, TRDIOA0,

TRDIOB0, TRDIOC0,

TRDIOD0, TRDIOA1,

TRDIOB1, TRDIOC1,

TRDIOD1, TRCTRG,

TRCCLK, TRFI,

TRGIOA, TRGIOB,

ADTRG, RXD0,

RXD1, RXD2, CLK0,

CLK1, CLK2, SSI,

SCL, SDA, SSO

VCC = 5.0 V

0.1

1.2

—

RESET

VCC = 5.0 V

0.1

1.2

—

IIH

Input “H” current

VI = 5 V, VCC = 5.0 V

—

5.0

µA

IIL

Input “L” current

VI = 0 V, VCC = 5.0 V

—

−5.0

µA

RPULLUP

Pull-up resistance

VI = 0 V, VCC = 5.0 V

100

Ω

RfXIN

Feedback

resistance

XIN

—

0.3

—

Ω

RfXCIN

Feedback

resistance

XCIN

—

Ω

VRAM

RAM hold voltage

During stop mode

1.8

—

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