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PS9552L1 датащи(PDF) 21 Page - Renesas Technology Corp

номер детали PS9552L1
подробное описание детали  2.5 A OUTPUT CURRENT, HIGH CMR IGBT GATE DRIVE PHOTOCOUPLER 8-PIN DIP PHOTOCOUPLER
PDF  24 Pages
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производитель  RENESAS [Renesas Technology Corp]
домашняя страница  http://www.renesas.com
Logo RENESAS - Renesas Technology Corp

PS9552L1 датащи(HTML) 21 Page - Renesas Technology Corp

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Data Sheet PN10589EJ07V0DS
19
PS9552,PS9552L1,PS9552L2,PS9552L3
(4) Cautions
• Fluxes
Avoid removing the residual flux with freon-based and chlorine-based cleaning solvent.
2. Cautions regarding noise
Be aware that when voltage is applied suddenly between the photocoupler’s input and output at startup, the
output transistor may enter the on state, even if the voltage is within the absolute maximum ratings.
USAGE CAUTIONS
1. This product is weak for static electricity by designed with high-speed integrated circuit so protect against static
electricity when handling.
2. Board designing
(1) By-pass capacitor of more than 0.1
μF is used between VCC and GND near device. Also, ensure that the
distance between the leads of the photocoupler and capacitor is no more than 10 mm.
(2) In older to avoid malfunctions and characteristics degradation, IGBT collector or emitter traces should not be
closed to the LED input.
(3) Pins 1, 4 (which is an NC
*1 pin) can either be connected directly to the GND pin on the LED side or left open.
Unconnected pins should not be used as a bypass for signals or for any other similar purpose because this
may degrade the internal noise environment of the device.
*1 NC: Non-Connection (No Connection)
3. Make sure the rise/fall time of the forward current is 0.5
μs or less.
4. In order to avoid malfunctions, make sure the rise/fall slope of the supply voltage is 3 V/
μs or less.
5. Avoid storage at a high temperature and high humidity.
<R>



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