IRF9956 datasheet(1/7 Pages) IRF

номер детали	IRF9956

подробное описание детали	Power MOSFET(Vdss=30V, Rds(on)=0.10ohm)

PDF	7 Pages

Scroll/Zoom	100%

производитель	IRF [International Rectifier]

домашняя страница	http://www.irf.com

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PRELIMINARY

HEXFET® Power MOSFET

PD - 9.1559A

Fifth Generation HEXFETs from International Rectifier

utilize advanced processing techniques to achieve

extremely low on-resistance per silicon area. This

benefit, combined with the fast switching speed and

ruggedized device design that HEXFET Power

MOSFETs are well known for, provides the designer

with an extremely efficient and reliable device for use

in a wide variety of applications.

The SO-8 has been modified through a customized

leadframe for enhanced thermal characteristics and

multiple-die capability making it ideal in a variety of

power applications. With these improvements, multiple

devices can be used in an application with dramatically

reduced board space. The package is designed for

vapor phase, infra red, or wave soldering techniques.

8/25/97

SO-8

VDSS = 30V

RDS(on) = 0.10Ω

IRF9956

Description

Recommended upgrade: IRF7303 or IRF7313

Lower profile/smaller equivalent: IRF7503

Symbol

Maximum

Units

Drain-Source Voltage

VDS

30

Gate-Source Voltage

VGS

± 20

TA = 25°C

3.5

TA = 70°C

2.8

Pulsed Drain Current

IDM

16

Continuous Source Current (Diode Conduction)

IS

1.7

TA = 25°C

2.0

TA = 70°C

1.3

Single Pulse Avalanche Energy

EAS

44

mJ

Avalanche Current

IAR

2.0

A

Repetitive Avalanche Energy

EAR

0.20

mJ

Peak Diode Recovery dv/dt

dv/dt

5.0

V/ ns

Junction and Storage Temperature Range

TJ, TSTG

-55 to + 150

°C

Thermal Resistance Ratings

Parameter

Symbol

Limit

Units

Maximum Junction-to-Ambient

RθJA

62.5

°C/W

Absolute Maximum Ratings ( TA = 25°C Unless Otherwise Noted)

Continuous Drain Current

Maximum Power Dissipation

A

ID

PD

V

W

D1

D2

G1

S2

G2

S1

T o p V iew

8

1

2

3

4

5

6

7

l Generation V Technology

l Ultra Low On-Resistance

l Dual N-Channel MOSFET

l Surface Mount

l Very Low Gate Charge and

Switching Losses

l Fully Avalanche Rated

Аналогичный номер детали - IRF9956

производитель	номер детали	датащи	подробное описание детали
Guangdong Youtai Semico...	IRF9956	475Kb / 7P	30V 2N-Channel MOSFET
International Rectifier	IRF9956PBF	169Kb / 7P	HEXFET Power MOSFET
	IRF9956PBF	175Kb / 7P	ULTRA LOW ON TESISTANCE
	IRF9956PBF	175Kb / 7P	ULTRA LOW ON TESISTANCE
Guangdong Youtai Semico...	IRF9956TR	475Kb / 7P	30V 2N-Channel MOSFET

More results

Аналогичное описание - IRF9956

производитель	номер детали	датащи	подробное описание детали
International Rectifier	IRF5800	98Kb / 8P	Power MOSFET(Vdss=-30V, Rds(on)=0.085ohm)
	IRF7416	116Kb / 9P	Power MOSFET(Vdss=-30V, Rds(on)=0.02ohm)
	IRF7503	114Kb / 8P	Power MOSFET(Vdss=30V, Rds(on)=0.135ohm)
	IRF7603	113Kb / 8P	Power MOSFET(Vdss=30V, Rds(on)=0.035ohm)
	IRF9Z34N	108Kb / 8P	Power MOSFET(Vdss=-55V, Rds(on)=0.10ohm, Id=-19A)
	IRF9Z34NS	162Kb / 10P	Power MOSFET(Vdss=-55V, Rds(on)=0.10ohm, Id=-19A)
	IRFB23N20D	196Kb / 11P	Power MOSFET(Vdss=200V, Rds(on)max=0.10ohm, Id=24A)
	IRFD024	172Kb / 6P	Power MOSFET(Vdss=60V, Rds(on)=0.10ohm, Id=2.5A)
	IRLD024	170Kb / 6P	Power MOSFET(Vdss=60V, Rds(on)=0.10ohm, Id=2.5A)
	SI4435DY	82Kb / 8P	Power MOSFET(Vdss=-30V, Rds(on)=0.020ohm

More results

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