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поискавой системы для электроныых деталей |
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поискавой системы для электроныых деталей |
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IRF9953 датащи(PDF) 2 Page - International Rectifier |
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IRF9953 датащи(HTML) 2 Page - International Rectifier |
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2 / 7 page  IRF9953 Parameter Min. Typ. Max. Units Conditions IS Continuous Source Current MOSFET symbol (Body Diode) showing the ISM Pulsed Source Current integral reverse (Body Diode) p-n junction diode. VSD Diode Forward Voltage ––– 0.82 1.2 V TJ = 25°C, IS = -1.25A, VGS = 0V trr Reverse Recovery Time ––– 27 54 ns TJ = 25°C, IF = -1.25A Qrr Reverse RecoveryCharge ––– 31 62 nC di/dt = -100A/µs Source-Drain Ratings and Characteristics ––– ––– ––– ––– 16 1.3 A
Surface mounted on FR-4 board, t ≤ 10sec. Repetitive rating; pulse width limited by max. junction temperature. ( See fig. 11 ) ISD ≤ -1.3A, di/dt ≤ -92A/µs, VDD ≤ V(BR)DSS, TJ ≤ 150°C Notes: Starting TJ = 25°C, L = 67mH RG = 25Ω, IAS = -1.3A. Pulse width ≤ 300µs; duty cycle ≤ 2%. Parameter Min. Typ. Max. Units Conditions V(BR)DSS Drain-to-Source Breakdown Voltage -30 ––– ––– V VGS = 0V, ID = -250µA ∆V(BR)DSS/∆TJ Breakdown Voltage Temp. Coefficient ––– 0.015 ––– V/°C Reference to 25°C, ID = -1mA ––– 0.165 0.250 VGS = 10V, ID = -1.0A ––– 0.290 0.400 VGS = 4.5V, ID = -0.50A VGS(th) Gate Threshold Voltage -1.0 ––– ––– V VDS = VGS, ID = -250µA gfs Forward Transconductance ––– -2.4 ––– S VDS = -15V, ID = -2.3A ––– ––– -2.0 VDS = 24V, VGS = 0V ––– ––– -25 VDS = 24V, VGS = 0V, TJ = 55°C Gate-to-Source Forward Leakage ––– ––– 100 VGS = -20V Gate-to-Source Reverse Leakage ––– ––– -100 VGS = 20V Qg Total Gate Charge ––– 6.1 12 ID = -2.3A Qgs Gate-to-Source Charge ––– 1.7 3.4 nC VDS = -10V Qgd Gate-to-Drain ("Miller") Charge ––– 1.1 2.2 VGS = -10V, See Fig. 10 td(on) Turn-On Delay Time ––– 9.7 19 VDD = -10V tr Rise Time ––– 14 28 ID = -1.0A td(off) Turn-Off Delay Time ––– 20 40 RG = 6.0 Ω tf Fall Time ––– 6.9 14 RD = 10 Ω Ciss Input Capacitance ––– 190 ––– VGS = 0V Coss Output Capacitance ––– 120 ––– pF VDS = -15V Crss Reverse Transfer Capacitance ––– 61 ––– ƒ = 1.0MHz, See Fig. 5 Electrical Characteristics @ TJ = 25°C (unless otherwise specified) IGSS µA Ω RDS(on) Static Drain-to-Source On-Resistance IDSS Drain-to-Source Leakage Current nA ns S D G |
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