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поискавой системы для электроныых деталей |
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поискавой системы для электроныых деталей |
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IRF9952 датащи(PDF) 2 Page - International Rectifier |
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IRF9952 датащи(HTML) 2 Page - International Rectifier |
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2 / 10 page  IRF9952
Surface mounted on FR-4 board, t ≤ 10sec. Parameter Min. Typ. Max. Units Conditions N-Ch 30 — — VGS = 0V, ID = 250µA P-Ch -30 — — VGS = 0V, ID = -250µA N-Ch — 0.015 — Reference to 25°C, ID = 1mA P-Ch — 0.015 — Reference to 25°C, ID = -1mA — 0.08 0.10 VGS = 10V, ID = 2.2A — 0.12 0.15 VGS = 4.5V, ID = 1.0A — 0.165 0.250 VGS = -10V, ID = -1.0A — 0.290 0.400 VGS = -4.5V, ID = -0.50A N-Ch 1.0 — — VDS = VGS, ID = 250µA P-Ch -1.0 — — VDS = VGS, ID = -250µA N-Ch — 12 — VDS = 15V, ID = 3.5A P-Ch — 2.4 — VDS = -15V, ID = -2.3A N-Ch — — 2.0 VDS = 24V, VGS = 0V P-Ch — — -2.0 VDS = -24V, VGS = 0V N-Ch — — 25 VDS = 24V, VGS = 0V, TJ = 125°C P-Ch — — -25 VDS = -24V, VGS = 0V, TJ = 125°C IGSS Gate-to-Source Forward Leakage N-P –– — ±100 VGS = ±20V N-Ch — 6.9 14 P-Ch — 6.1 12 N-Ch — 1.0 2.0 P-Ch — 1.7 3.4 N-Ch — 1.8 3.5 P-Ch — 1.1 2.2 N-Ch — 6.2 12 P-Ch — 9.7 19 N-Ch — 8.8 18 P-Ch — 14 28 N-Ch — 13 26 P-Ch — 20 40 N-Ch — 3.0 6.0 P-Ch — 6.9 14 N-Ch — 190 — P-Ch — 190 — N-Ch — 120 — pF P-Ch — 110 — N-Ch — 61 — P-Ch — 54 — V(BR)DSS Drain-to-Source Breakdown Voltage ∆V (BR)DSS/∆TJ Breakdown Voltage Temp. Coefficient RDS(ON) Static Drain-to-Source On-Resistance VGS(th) Gate Threshold Voltage gfs Forward Transconductance IDSS Drain-to-Source Leakage Current Qg Total Gate Charge Qgs Gate-to-Source Charge Qgd Gate-to-Drain ("Miller") Charge td(on) Turn-On Delay Time tr Rise Time td(off) Turn-Off Delay Time tf Fall Time Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance Electrical Characteristics @ TJ = 25°C (unless otherwise specified) V V/°C Ω V S µA nC ns N-Channel ID = 1.8A, VDS = 10V, VGS = 10V P-Channel ID = -2.3A, VDS = -10V, VGS = -10V N-Channel VDD = 10V, ID = 1.0A, RG = 6.0Ω, RD = 10Ω P-Channel VDD = -10V, ID = -1.0A, RG = 6.0Ω, RD = 10Ω N-Channel VGS = 0V, VDS = 15V, ƒ = 1.0MHz P-Channel VGS = 0V, VDS = -15V, ƒ = 1.0MHz N-Ch P-Ch Parameter Min. Typ. Max. Units Conditions N-Ch — — 1.7 P-Ch — — -1.3 N-Ch — — 16 P-Ch — — 16 N-Ch — 0.82 1.2 TJ = 25°C, IS = 1.25A, VGS = 0V P-Ch — -0.82 -1.2 TJ = 25°C, IS = -1.25A, VGS = 0V N-Ch — 27 53 P-Ch — 27 54 N-Ch — 28 57 P-Ch — 31 62 Source-Drain Ratings and Characteristics IS Continuous Source Current (Body Diode) ISM Pulsed Source Current (Body Diode) VSD Diode Forward Voltage trr Reverse Recovery Time Qrr Reverse Recovery Charge A V ns nC N-Channel TJ = 25°C, IF =1.25A, di/dt = 100A/µs P-Channel TJ = 25°C, IF = -1.25A, di/dt = 100A/µs N-Channel ISD ≤ 2.0A, di/dt ≤ 100A/µs, VDD ≤ V(BR)DSS, TJ ≤ 150°C P-Channel ISD ≤ -1.3A, di/dt ≤ 84A/µs, VDD ≤ V(BR)DSS, TJ ≤ 150°C Repetitive rating; pulse width limited by max. junction temperature. ( See fig. 23 ) Notes: Pulse width ≤ 300µs; duty cycle ≤ 2%. N-Channel Starting TJ = 25°C, L = 22mH RG = 25Ω, IAS = 2.0A. (See Figure 12) P-Channel Starting TJ = 25°C, L = 67mH RG = 25Ω, IAS = -1.3A. nA |
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