IRF9130

2

www.irf.com

Thermal Resistance

Parameter

Min Typ Max

Units

Test Conditions

RthJC

Junction to Case

—

—

1.67

RthJA

Junction-to-Ambient

—

—

30

soldered to a 2” square copper-clad board

°C/W

Source-Drain Diode Ratings and Characteristics

Parameter

Min Typ

Max Units

Test Conditions

IS

Continuous Source Current (Body Diode)

—

—

-11

ISM

Pulse Source Current (Body Diode) ➀

—

—

-50

VSD

Diode Forward Voltage

—

—

-4.7

V

trr

Reverse Recovery Time

—

—

250

nS

Tj = 25°C, IF =-11A, di/dt ≤-100A/µs

QRR

Reverse Recovery Charge

—

—

3.0

µc

VDD ≤-50V ➃

t on

Forward Turn-On Time

Intrinsic turn-on time is negligible. Turn-on speed is substantially controlled by LS + LD.

A

For footnotes refer to the last page

Parameter

Min

Typ

Max Units

Test Conditions

BVDSS

Drain-to-Source Breakdown Voltage

-100

—

—

V

VGS = 0V, ID = -1.0mA

∆BVDSS/∆TJ Temperature Coefficient of Breakdown

—

-0.087

—

V/°C

Reference to 25°C, ID = -1.0mA

Voltage

RDS(on)

Static Drain-to-Source On-State

—

—

0.30

VGS =-10V, ID =-7.0A➃

Resistance

—

—

0.35

VGS =-10V, ID =-11A ➃

VGS(th)

Gate Threshold Voltage

-2.0

—

-4.0

V

VDS = VGS, ID =-250µA

gfs

Forward Transconductance

3

—

—

S ( )

VDS >-15V, IDS =-7.0A➃

IDSS

Zero Gate Voltage Drain Current

—

—

-25

VDS=-80V, VGS=0V

—

—

-250

VDS =-80V

VGS = 0V, TJ = 125°C

IGSS

Gate-to-Source Leakage Forward

—

—

-100

VGS =-20V

IGSS

Gate-to-Source Leakage Reverse

—

—

1 0 0

VGS =-20V

Qg

Total Gate Charge

—

—

2 9

VGS =-10V, ID=-11A

Qgs

Gate-to-Source Charge

—

—

7.1

nC

VDS =-50V

Qgd

Gate-to-Drain (‘Miller’) Charge

—

—

2 1

Turn-On Delay Time

—

—

6 0

VDD =-50V, ID =-11A,

t r

Rise Time

—

—

1 4 0

RG =7.5Ω

Turn-Off Delay Time

—

—

140

tf

Fall Time

—

—

140

LS + LD

Total Inductance

—

6.1

—

Ciss

Input Capacitance

—

860

VGS = 0V, VDS =25V

Coss

Output Capacitance

—

350

—

pF

f = 1.0MHz

Crss

Reverse Transfer Capacitance

—

125

—

nA

nH

ns

µA

Ω

Measured from the center of

drain pad to center of source

pad