 |
поискавой системы для электроныых деталей |
|
|
поискавой системы для электроныых деталей |
|
IRF7754 датащи(PDF) 2 Page - International Rectifier |
|
|
|||||||||||||||||||||||||||||
IRF7754 датащи(HTML) 2 Page - International Rectifier |
|
|
2 / 9 page  IRF7754 2 www.irf.com Parameter Min. Typ. Max. Units Conditions IS Continuous Source Current MOSFET symbol (Body Diode) showing the ISM Pulsed Source Current integral reverse (Body Diode) p-n junction diode. VSD Diode Forward Voltage ––– ––– -1.2 V TJ = 25°C, IS = -1.0A, VGS = 0V trr Reverse Recovery Time ––– 39 59 ns TJ = 25°C, IF = -1.0A Qrr Reverse Recovery Charge ––– 27 41 nC di/dt = -100A/µs Source-Drain Ratings and Characteristics ––– ––– ––– ––– -22 -1.0 A Electrical Characteristics @ TJ = 25°C (unless otherwise specified) Notes: Repetitive rating; pulse width limited by max. junction temperature. Pulse width ≤ 400µs; duty cycle ≤ 2%. When mounted on 1 inch square copper board, t < 10 sec. S D G Parameter Min. Typ. Max. Units Conditions V(BR)DSS Drain-to-Source Breakdown Voltage -12 ––– ––– VVGS = 0V, ID = -250µA ∆V(BR)DSS/∆TJ Breakdown Voltage Temp. Coefficient ––– 0.008 ––– V/°C Reference to 25°C, ID = -1mA ––– ––– 25 VGS = -4.5V, ID = -5.4A ––– ––– 34 VGS = -2.5V, ID = -4.6A ––– ––– 49 VGS = -1.8V, ID = -3.9A VGS(th) Gate Threshold Voltage -0.4 ––– -0.9 V VDS = VGS, ID = -250µA gfs Forward Transconductance 16 ––– ––– SVDS = -10V, ID = -5.4A ––– ––– -1.0 VDS = -9.6V, VGS = 0V ––– ––– -25 VDS = -9.6V, VGS = 0V, TJ = 70°C Gate-to-Source Forward Leakage ––– ––– -100 VGS = -8V Gate-to-Source Reverse Leakage ––– ––– 100 VGS = 8V Qg Total Gate Charge ––– 22 ––– ID = -5.4A Qgs Gate-to-Source Charge ––– 3.9 ––– nC VDS = -6V Qgd Gate-to-Drain ("Miller") Charge ––– 4.8 ––– VGS = -4.5V td(on) Turn-On Delay Time ––– 9.8 14.7 VDD = -6V, VGS = -4.5V tr Rise Time ––– 18 27 ID = -1.0A td(off) Turn-Off Delay Time ––– 267 401 RD = 6Ω tf Fall Time ––– 191 287 RG = 6Ω Ciss Input Capacitance ––– 1984 ––– VGS = 0V Coss Output Capacitance ––– 618 ––– pF VDS = -6V Crss Reverse Transfer Capacitance ––– 385 ––– ƒ = 1.0MHz IGSS µA m Ω RDS(on) Static Drain-to-Source On-Resistance IDSS Drain-to-Source Leakage Current nA ns |
|
|
ссылки URL |
| Вашему бизинису помогли Аллдатащит? [ DONATE ] |
Что такое Аллдатащит | реклама | контакт | Конфиденциальность | Ссылка на техническое описание | обмен ссыками | поиск по производителю All Rights Reserved©Alldatasheet.com |
| Russian : Alldatasheetru.com | Korean : Alldatasheet.co.kr | Spanish : Alldatasheet.es | French : Alldatasheet.fr | Italian : Alldatasheetit.com Portuguese : Alldatasheetpt.com | Polish : Alldatasheet.pl | Vietnamese : Alldatasheet.vn Indian : Alldatasheet.in | Mexican : Alldatasheet.com.mx | British : Alldatasheet.co.uk | New Zealand : Alldatasheet.co.nz |
|
Family Site : ic2ic.com |
icmetro.com |
Russian ▼
English
Chinese
German
Japanese
Russian
Korean
Spanish
French
Italian
Portuguese
Polish
Vietnamese
Indian
Mexican
British
New Zealand
