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IRF7707 датащи(PDF) 2 Page - International Rectifier |
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IRF7707 датащи(HTML) 2 Page - International Rectifier |
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2 / 8 page ![]() IRF7707 2 www.irf.com Parameter Min. Typ. Max. Units Conditions IS Continuous Source Current MOSFET symbol (Body Diode) showing the ISM Pulsed Source Current integral reverse (Body Diode) p-n junction diode. VSD Diode Forward Voltage ––– ––– -1.2 V TJ = 25°C, IS = -1.5A, VGS = 0V trr Reverse Recovery Time ––– 142 213 ns TJ = 25°C, IF = -1.5A Qrr Reverse Recovery Charge ––– 147 221 nC di/dt = -100A/µs Source-Drain Ratings and Characteristics ––– ––– ––– ––– -28 -1.5 A Parameter Min. Typ. Max. Units Conditions V(BR)DSS Drain-to-Source Breakdown Voltage -20 ––– ––– V VGS = 0V, ID = -250µA ∆V(BR)DSS/∆TJ Breakdown Voltage Temp. Coefficient ––– 0.012 ––– V/°C Reference to 25°C, ID = -1mA ––– 14.3 22 VGS = -4.5V, ID = -7.0A ––– 18.9 33 VGS = -2.5V, ID = -6.0A VGS(th) Gate Threshold Voltage -0.45 ––– -1.2 V VDS = VGS, ID = -250µA gfs Forward Transconductance 15 ––– ––– S VDS = -10V, ID = -7.0A ––– ––– -1.0 VDS = -16V, VGS = 0V ––– ––– -25 VDS = -16V, VGS = 0V, TJ = 70°C Gate-to-Source Forward Leakage ––– ––– -100 VGS = -12V Gate-to-Source Reverse Leakage ––– ––– 100 VGS = 12V Qg Total Gate Charge ––– 31 47 ID = -7.0A Qgs Gate-to-Source Charge ––– 6.4 ––– nC VDS = -16V Qgd Gate-to-Drain ("Miller") Charge ––– 10 ––– VGS = -4.5V td(on) Turn-On Delay Time ––– 11 17 VDD = -10V tr Rise Time ––– 54 81 ID = -1.0A td(off) Turn-Off Delay Time ––– 134 201 RG = 6.0Ω tf Fall Time ––– 138 207 VGS = -4.5V Ciss Input Capacitance ––– 2361 ––– VGS = 0V Coss Output Capacitance ––– 512 ––– pF VDS = -15V Crss Reverse Transfer Capacitance ––– 323 ––– ƒ = 1.0MHz Electrical Characteristics @ TJ = 25°C (unless otherwise specified) IGSS µA m Ω RDS(on) Static Drain-to-Source On-Resistance IDSS Drain-to-Source Leakage Current nA ns Notes: Repetitive rating; pulse width limited by max. junction temperature. Pulse width ≤ 300µs; duty cycle ≤ 2%. When mounted on 1 inch square copper board, t < 10sec. S D G |
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