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IRF7704 датащи(PDF) 2 Page - International Rectifier

номер детали IRF7704
подробное описание детали  Power MOSFET(Vdss=-40V)
PDF  8 Pages
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производитель  IRF [International Rectifier]
домашняя страница  http://www.irf.com
Logo IRF - International Rectifier

IRF7704 датащи(HTML) 2 Page - International Rectifier

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Parameter
Min. Typ. Max. Units
Conditions
V(BR)DSS
Drain-to-Source Breakdown Voltage
-40
–––
–––
V
VGS = 0V, ID = -250µA
∆V(BR)DSS/∆TJ Breakdown Voltage Temp. Coefficient
–––
0.03
–––
V/°C
Reference to 25°C, ID = -1mA
–––
–––
46
VGS = -10V, ID = -4.6A
‚
–––
–––
74
VGS = -4.5V, ID = -3.7A
‚
VGS(th)
Gate Threshold Voltage
-1.0
–––
-3.0
V
VDS = VGS, ID = -250µA
gfs
Forward Transconductance
7.2
–––
–––
S
VDS = -10V, ID = -4.6A
–––
–––
-10
VDS = -32V, VGS = 0V
–––
–––
-25
VDS = -32V, VGS = 0V, TJ = 70°C
Gate-to-Source Forward Leakage
–––
–––
-100
VGS = -20V
Gate-to-Source Reverse Leakage
–––
–––
100
VGS = 20V
Qg
Total Gate Charge
–––
25
38
ID = -4.6A
Qgs
Gate-to-Source Charge
–––
10
15
nC
VDS = -15V
Qgd
Gate-to-Drain ("Miller") Charge
–––
9.5
14
VGS = -4.5V
td(on)
Turn-On Delay Time
–––
25
–––
VDD = -20V
‚
tr
Rise Time
–––
360
–––
ID = -1.0A
td(off)
Turn-Off Delay Time
–––
190
–––
RG = 6.0Ω
tf
Fall Time
–––
100
–––
VGS = -4.5V
Ciss
Input Capacitance
––– 3150 –––
VGS = 0V
Coss
Output Capacitance
–––
250
–––
pF
VDS = -25V
Crss
Reverse Transfer Capacitance
–––
200
–––
ƒ = 1.0kHz
Parameter
Min. Typ. Max. Units
Conditions
IS
Continuous Source Current
MOSFET symbol
(Body Diode)
showing the
ISM
Pulsed Source Current
integral reverse
(Body Diode)

p-n junction diode.
VSD
Diode Forward Voltage
–––
–––
-1.2
V
TJ = 25°C, IS = -1.5A, VGS = 0V
‚
trr
Reverse Recovery Time
–––
29
44
ns
TJ = 25°C, IF = -1.5A
Qrr
Reverse Recovery Charge
–––
41
62
nC
di/dt = -100A/µs
‚
Source-Drain Ratings and Characteristics
A
-19
–––
–––
–––
-1.5
–––
S
D
G
 Repetitive rating; pulse width limited by
max. junction temperature.
Notes:
‚ Pulse width ≤ 400µs; duty cycle ≤ 2%.
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
IGSS
µA
m
RDS(on)
Static Drain-to-Source On-Resistance
IDSS
Drain-to-Source Leakage Current
nA
ns
ƒ Surface mounted on 1 in square Cu board



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