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поискавой системы для электроныых деталей |
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поискавой системы для электроныых деталей |
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IRF7701 датащи(PDF) 2 Page - International Rectifier |
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IRF7701 датащи(HTML) 2 Page - International Rectifier |
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2 / 9 page  IRF7701 2 www.irf.com Repetitive rating; pulse width limited by max. junction temperature. Notes: Pulse width ≤ 300µs; duty cycle ≤ 2%. Parameter Min. Typ. Max. Units Conditions IS Continuous Source Current MOSFET symbol (Body Diode) showing the ISM Pulsed Source Current integral reverse (Body Diode) p-n junction diode. VSD Diode Forward Voltage ––– ––– -1.2 V TJ = 25°C, IS = -1.5A, VGS = 0V trr Reverse Recovery Time ––– 52 78 ns TJ = 25°C, IF = -1.5A Qrr Reverse RecoveryCharge ––– 53 80 nC di/dt = 100A/µs Source-Drain Ratings and Characteristics ––– ––– ––– ––– -80 -1.5 A When mounted on 1 inch square copper board, t<10 sec S D G Parameter Min. Typ. Max. Units Conditions V(BR)DSS Drain-to-Source Breakdown Voltage -12 ––– ––– V VGS = 0V, ID = -250µA ∆V(BR)DSS/∆TJ Breakdown Voltage Temp. Coefficient ––– -0.006 ––– V/°C Reference to 25°C, ID = -1mA ––– ––– 0.011 VGS = -4.5V, ID = -10A RDS(on) Static Drain-to-Source On-Resistance ––– ––– 0.015 VGS = -2.5V, ID = -8.5A ––– ––– 0.022 VGS = -1.8V, ID = -7.0A VGS(th) Gate Threshold Voltage -0.45 ––– -1.2 V VDS = VGS, ID = -250µA gfs Forward Transconductance 21 ––– ––– S VDS = -10V, ID = -10A ––– ––– 1.0 VDS = -12V, VGS = 0V ––– ––– -25 VDS = -9.6V, VGS = 0V, TJ = 70°C Gate-to-Source Forward Leakage ––– ––– -100 VGS = -8.0V Gate-to-Source Reverse Leakage ––– ––– 100 VGS = 8.0V Qg Total Gate Charge ––– 69 100 ID = -8.0A Qgs Gate-to-Source Charge ––– 9.1 14 nC VDS = -9.6V Qgd Gate-to-Drain ("Miller") Charge ––– 21 32 VGS = -4.5V td(on) Turn-On Delay Time ––– 19 ––– VDD = -6.0V tr Rise Time ––– 20 ––– ID = -1.0A td(off) Turn-Off Delay Time ––– 240 ––– RD = 6.0Ω tf Fall Time ––– 220 ––– VGS = -4.5V Ciss Input Capacitance ––– 5050 ––– VGS = 0V Coss Output Capacitance ––– 1520 ––– pF VDS = -10V Crss Reverse Transfer Capacitance ––– 1120 ––– ƒ = 1.0MHz Electrical Characteristics @ TJ = 25°C (unless otherwise specified) IGSS µA Ω IDSS Drain-to-Source Leakage Current nA ns |
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